Method for inducing defect annealing based on ionization irradiation
A technology of ionizing radiation and displacement, applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve problems such as device displacement damage, and achieve the effects of easy operation, cost reduction, and simple steps
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specific Embodiment approach 1
[0019] Specific Embodiment 1: In this embodiment, a method for annealing induced displacement defects based on ionizing radiation is carried out according to the following steps:
[0020] 1. Measure the chip thickness a of the sample containing displacement defects, and the farthest distance b from the area containing displacement defects to the surface;
[0021] 2. Select the type of incident particles, and then use the Geant4 software to input the radiation source energy of the incident particles, calculate the incident depth d of the incident particles in the sample chip, and ensure that the input radiation source energy satisfies d>2a or d>4b;
[0022] 3. According to the energy of the radiation source in step 2, calculate the ionization absorbed dose Id and the displacement absorbed dose Dd of the incident particles per unit fluence in the sample through the Geant4 software;
[0023] According to the distribution of ionized absorbed dose Id and displacement absorbed dose ...
specific Embodiment approach 2
[0029] Embodiment 2: This embodiment is different from Embodiment 1 in that: the irradiated particles are electrons, protons, heavy ions, neutrons, photons or mesons. Others are the same as the first embodiment.
specific Embodiment approach 3
[0030] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that the sample is an MIS device or a bipolar device. Others are the same as those in Embodiment 1 or 2.
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