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Evaporation source evaporation rate control equipment, method and device and storage medium

A technology of evaporation rate and evaporation source, which is applied in the fields of devices and storage media, evaporation rate control equipment, and methods, and can solve problems such as the influence of film material evaporation rate and the effective control of evaporation rate of difficult evaporation sources, etc.

Pending Publication Date: 2018-07-31
上海祖强能源有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The evaporation rate of each evaporation source is affected by many factors, such as the amount of film material in the evaporation source, the partial pressure of the film material in the vacuum chamber after evaporation, the resistance and current of the evaporation source itself, and the installation position of the evaporation source, etc. The evaporation of the film material, the heating of the film material changes, and the evaporation rate of the film material is also affected. Therefore, it is difficult to effectively control the evaporation rate of each evaporation source

Method used

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  • Evaporation source evaporation rate control equipment, method and device and storage medium
  • Evaporation source evaporation rate control equipment, method and device and storage medium
  • Evaporation source evaporation rate control equipment, method and device and storage medium

Examples

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Embodiment 1

[0059] figure 1 It is a structural schematic diagram of the evaporation rate control device for the evaporation source provided in Embodiment 1 of the present invention. Such as figure 1 As shown, the device includes a connected controller 1 and an online collector 2 .

[0060] Wherein, the online collector 2 is used to collect the coating parameters of the substrate, and send the coating parameters to the controller 1 . Wherein, the coating parameters include film thickness and / or element ratio.

[0061]Optionally, the online acquisition instrument 2 is set on the substrate output transmission line 4 connected to the CIGS chamber 3 , and is used for collecting coating parameters of the substrate on the substrate output transmission line 4 . Wherein, the CIGS chamber 3 is used to accommodate the evaporation source.

[0062] After the substrate is coated in the CIGS chamber 3 , the substrate is transported to the on-line collector 2 by the sheet output transmission line 4 c...

Embodiment 2

[0076] This embodiment is further optimized on the basis of the foregoing embodiments. Figure 2a It is the left view of the CIGS chamber provided by Embodiment 2 of the present invention, Figure 2b It is the front view of the CIGS chamber provided by the second embodiment of the present invention. combine Figure 2a and Figure 2b , the device also includes a film thickness controller 7 and a collection component.

[0077] The acquisition part is used to collect the oscillation frequency caused by the coating of the first target coating element; the film thickness controller is respectively connected with the controller and the acquisition part, and is used to obtain the variation of the oscillation frequency from the acquisition part, according to the change measuring the thickness of the first target coating element, and sending the thickness of the first target coating element to the controller.

[0078] Optionally, collection components such as Figure 2c As shown, ...

Embodiment 3

[0094] On the basis of the above embodiments, the device further includes a sampling component 9 and an offline collector 10 . Figure 3a It is the left view of the CIGS chamber provided by Embodiment 3 of the present invention, Figure 3b It is the front view of the CIGS chamber provided by Embodiment 3 of the present invention. combine Figure 3a and Figure 3b , the device includes a controller 1 , an online collector 2 , a film thickness controller 7 , a collection component, a sampling component 9 and an offline collector 10 . Wherein, the relevant descriptions of the controller 1, the online acquisition instrument 2, the film thickness control instrument 7 and the acquisition components are detailed in the above-mentioned embodiments, and will not be repeated here.

[0095] On the outer wall of the CIGS chamber 3 above each metal evaporation source, at least one sampling component 9 is respectively arranged for plating the second target coating element. Wherein, the ...

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PUM

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Abstract

The embodiment of the invention discloses evaporation source evaporation rate control equipment, method and device and a storage medium. The equipment comprises a controller and an on-line collectioninstrument which are connected; the on-line collection instrument is used for collecting film plating parameters of a base plate and sending the film plating parameters to the controller; and the controller is used for generating the heating power adjusting quantity according to the received film plating parameters and controlling the evaporation source evaporation rate based on the heating poweradjusting quantity. The equipment provided in the embodiment can control the evaporation source evaporation rate.

Description

technical field [0001] Embodiments of the present invention relate to engineering control technology, and in particular to an evaporation rate control device, method, device and storage medium of an evaporation source. Background technique [0002] CIGS is an abbreviation for thin-film solar cells, and its main components are Cu (copper), In (indium), Ga (gallium), and Se (selenium). Depositing copper indium gallium selenide functional films on glass substrates is an approved technology for CIGS production. Among them, co-evaporation coating CIGS is a relatively mature method at present. The ratio and thickness of the four elements CU, IN, GA, and SE in CIGS determine the quality of the film, and the ratio and thickness of the elements are directly related to the evaporation rate of each element. Therefore, it is necessary to control the evaporation rate of each evaporation source. [0003] The evaporation rate of each evaporation source is affected by many factors, such ...

Claims

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Application Information

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IPC IPC(8): C23C14/54C23C14/24
CPCC23C14/24C23C14/546
Inventor 王晓尉
Owner 上海祖强能源有限公司
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