Biasing circuit and integrated module based on GaAs PHEMT (pseudomorphic high-electron-mobility transistor) process

Abstract

An embodiment of the invention discloses a biasing circuit and an integrated module based on a GaAs PHEMT (pseudomorphic high-electron-mobility transistor) process. The biasing circuit comprises L-level biasing units, an output end of an i biasing unit is electrically connected with an input end of an (i-1) biasing unit, an input end of an L biasing unit is electrically connected witha voltage output end of a power supply, an output end of a first biasing unit is electrically connected with an output end of the biasing circuit, each biasing unit comprises a divider resistor and atleast one N-type transistor which are connected in series, a grid electrode of each N-type transistor is electrically connected with a drain electrode, the output voltage and the input voltage of anoptional biasing unit are in a 1 / 2-power relationship, and the influence of power voltage on the output voltage of the biasing circuit can be reduced by the aid of the L-level biasing units. The biasing circuit can solve the problem that biasing voltage outputted by an existing biasing circuit based on the GaAs PHEMT process is easily affected by the power voltage.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of radio frequency integrated circuits, in particular to a bias circuit and an integrated module based on GaAsPHEMT technology. Background technique [0002] The bias circuit can provide a certain voltage bias or current bias for the functional modules in the integrated circuit to ensure the normal operation of the functional modules. However, the output signal of the existing bias circuit is easily affected by the process, power supply voltage and temperature. Especially in some applications, the power supply voltage has a large variation range, and the large fluctuation of the power supply voltage becomes the main factor affecting the normal performance of the bias circuit. [0003] In radio frequency communication systems, because the gallium arsenide (GaAs) pseudo-modulation doped heterojunction field-effect transistor (pseudomorphic high-electron-mobility transistor, PHEMT) proces...

AI Technical Summary

Problems solved by technology

[0004] The invention provides a bias circuit and an integrated module based on the GaAs PHEMT process to solve the problem that the bias voltage output by the bias circuit of the existing GaAs PHEMT process is easily affected by the power supply voltage

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