A dual-station vacuum processor with uniform vacuuming

Abstract

The invention relates to a double-station vacuum processor with uniform vacuuming, which is provided with two vacuum processing chambers which can be used as process processing reaction chambers, and a shared eccentric air suction port and a vacuum pump connected to the two vacuum processing chambers, wherein each A damping body with a set thickness in the vertical direction is provided in the area near the eccentric pumping port in the vacuum processing chamber to reduce the pumping rate of the gas at the near end of the pumping port to balance the pumping rate of the gas at the far end of the pumping port , to improve the impact of cavity eccentricity on process uniformity. In the present invention, a channel for communicating with the atmospheric environment outside the cavity can be further provided inside the rib as the damping body, so as to facilitate the connection of the cable pipeline in the cavity with the outside world.

Description

technical field [0001] The invention relates to a vacuuming technology of a plasma processing device, in particular to a double-station vacuum processor for uniform vacuuming. Background technique [0002] The pressure control of the process in the etching equipment, the uniformity of the etching index, etc., are all related to the design of the vacuum processing chamber. Compared with single-chamber equipment with only one vacuum processing chamber, the equipment designed with multi-station vacuum processor has higher output: for example, a double-station vacuum processor is equipped with two vacuum processing chambers for engraving respectively. Etching treatment improves production efficiency; the two chambers share a set of vacuum pumps, throttle valves, control units and other components of the vacuum generating circuit, which can save costs, effectively save space, and make the product compact. [0003] In single-chamber equipment with only one vacuum processing chamb...

AI Technical Summary

Problems solved by technology

[0004] In this way, for each vacuum processing chamber of the double-station vacuum processor, the eccentric suction port is asymmetrically positioned in the cavity (deviating from the concentric suction port corresponding to the single cavity); then the distance in each vacuum processing chamber is eccentric The position closer to the suction port has a faster pumping rate and is easy to be pumped to a lower pressure, but the position farther from the eccentric suction port will affect the pumping rate and pressure due to the longer path. It is very easy to cause uneven etching in the 0~360° direction

In addition, the vacuum volume of the double-station vacuum processor increases, resulting in an increase in the load of the vacuum pump, which makes it difficult to achieve the vacuum degree required by the process, and it is difficult to achieve a balance between "high output" and "high performance". Application of Work Station Vacuum Processor in High Performance Etching Process

Images