Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for synthesizing gaphene by carbon oxide-assisted chemical vapor phase deposition

A chemical vapor deposition, oxide-assisted technology, applied in the direction of graphene, nano-carbon, etc., can solve problems such as the decrease of nucleation density and the enhancement of oxygen atom etching

Inactive Publication Date: 2018-06-15
FUDAN UNIV
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With increasing hydrogen content, C 2 The particle generation process is inhibited, the etching effect of oxygen atoms is enhanced, and therefore, the nucleation density decreases

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for synthesizing gaphene by carbon oxide-assisted chemical vapor phase deposition
  • Method for synthesizing gaphene by carbon oxide-assisted chemical vapor phase deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0032] In this example, a copper foil with a purity of 99.998% and a thickness of 25 µm was used as the substrate.

[0033] 1. Trial experiment:

[0034] First, put the cut copper foil into the electrochemical polishing device, use the copper foil as the anode and the graphite as the cathode, and polish it with a voltage of 1.5V-2.0V for 10 minutes. After taking it out, rinse it with deionized water and use nitrogen with a purity of 99%. blow dry. The polished copper foil is heated in air at 180°C~220°C for 4~10 minutes to oxidize it.

[0035] Put the oxidized copper foil substrate into the furnace chamber of the chemical vapor deposition system, and then vacuumize the furnace chamber. Introduce 100 sccm of argon gas into the furnace chamber, and start to raise the temperature of the furnace chamber at the same time. After the temperat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical field of graphene preparation and particularly relates to a method for synthesizing gaphene by carbon oxide-assisted chemical vapor phase deposition. The methodcomprises the following steps: tentative experiment and graphene synthesis; the tentative experiment comprises the following processes: substrate polishing and oxidation and loading a substrate into achemical vapor phase deposition system; growing the grapheme under preset reaction conditions; recording the nucleation density, drawing a 'nucleation density-H2 flow' curve and determining nucleation conditions and extension conditions; finally synthesizing the gaphene according to the determined nucleation conditions and extension conditions. The method provided by the invention can realize thesynthesis of large-scale single crystal graphene, can be duplicated in different systems and has better applicability to the different systems.

Description

technical field [0001] The invention belongs to the technical field of graphene preparation, in particular to a method for synthesizing graphene by chemical vapor deposition assisted by carbon oxides. Background technique [0002] The synthesis of large-area single-crystal graphene is an important topic of concern to scientific researchers. The core link is how to reduce the nucleation density while ensuring the epitaxial growth of nucleated graphene at a faster rate. The approach of some researchers is to reduce the gas flow of carbon source and increase the flow of hydrogen substantially, in order to suppress the nucleation of graphene as much as possible (Teng MA, et al, ACS Nano , Vol. 8 (12) 12806-12813, 2014); but the disadvantage of this method is that the growth of graphene is very slow, and it usually takes a long time to obtain graphene with a large area. And some researchers have proposed the method of growing single crystal graphene on the oxide substrate (Yunfe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B32/186C01B32/188
CPCC01P2004/02
Inventor 刘洋陈育明
Owner FUDAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com