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Hybrid device for implementing soft switching characteristic of Si IGBT (silicon insulated gate bipolar transistor)

A hybrid, soft-switching technology, applied in the direction of electrical components, climate sustainability, output power conversion devices, etc., can solve the problems of high cost, popularization and application restrictions, etc., to achieve control device cost, simple connection structure, and reduce dynamics The Effect of Switching Losses

Active Publication Date: 2018-06-01
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, silicon carbide is an emerging material with high cost, so its popular application is also limited.

Method used

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  • Hybrid device for implementing soft switching characteristic of Si IGBT (silicon insulated gate bipolar transistor)
  • Hybrid device for implementing soft switching characteristic of Si IGBT (silicon insulated gate bipolar transistor)
  • Hybrid device for implementing soft switching characteristic of Si IGBT (silicon insulated gate bipolar transistor)

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Experimental program
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Embodiment

[0031] figure 1 It is a schematic diagram of a hybrid device for realizing Si IGBT soft switching characteristics in the present invention.

[0032] In this embodiment, when the Si IGBT works in the hard switching state (Hard), the voltage and current waveforms of the device will overlap with each other when they are turned on and off, such as figure 2 (a1) (b1) shown. It is an important reason for the high switching loss of the device. In order to reduce the switching loss, it can be considered that the switching loss is suppressed by controlling the voltage and current waveforms. In previous studies, people usually classify zero-voltage turn-on as soft turn-on and zero-current turn-off as soft turn-off. In fact, since SiIGBT dynamic switching loss depends on the specific overlap of voltage and current waveforms, such a definition does not accurately outline all soft switching situations. When the Si IGBT is turned on and off, the conversion transition form of voltage an...

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Abstract

The invention discloses a hybrid device for realizing the soft switching characteristic of a Si IGBT (silicon insulated gate bipolar transistor). A silicon carbide metal-oxide-semiconductor field-effect transistor SiC MOSFET and a silicon insulated gate bipolar transistor Si IGBT are connected in series so as to form the hybrid device; current flows into the drain of the SiC MOSFET and flows out from the source of the SiC MOSFET; the source of the SiC MOSFET is connected with the collector of the Si IGBT, so that the current can flow into the Si IGBT, and flows out from the emitter of the Si IGBT; and in the operation process of the hybrid device, the soft switching characteristic of the Si IGBT can be realized through two different modulation methods according to actual circuit environments.

Description

technical field [0001] The invention belongs to the technical field of device optimization and application, and more specifically relates to a hybrid device for realizing SiIGBT soft switching characteristics. Background technique [0002] Silicon Insulated Gate Bipolar Transistor (Si IGBT) is a very important power semiconductor element. It has low conduction loss and low device cost at high current level, so it is widely used in high power level equipment such as medium voltage Motor drives, electric vehicle traction inverters and wind-solar grid-connected inverters. [0003] However, due to the characteristics of the Si IGBT minority carrier device, the tail current that is often generated when the device is turned off leads to a large turn-off loss, and the switching frequency of the Si IGBT is therefore generally low. In order to reduce the switching loss of Si IGBT, researchers have done a lot of work in its design and optimization: through the optimization of the dri...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/08
CPCH02M1/083H02M1/0058Y02B70/10
Inventor 李凯马兰徐红兵邹见效郑宏谢川
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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