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Method of using reflection electron probe to analyze glass defects

A technology of glass defects and reflected electrons, which is applied in the direction of material analysis using wave/particle radiation, material analysis using radiation diffraction, and material analysis, can solve problems such as inaccurate positioning of glass defects, and achieve inaccurate defect positioning, The method is simple and fast, and the effect

Active Publication Date: 2018-05-22
DONGXU OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of this disclosure is to provide a method for analyzing glass defects using a reflection electron probe, which can well solve the problem of inaccurate positioning of glass defects by existing methods

Method used

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  • Method of using reflection electron probe to analyze glass defects
  • Method of using reflection electron probe to analyze glass defects
  • Method of using reflection electron probe to analyze glass defects

Examples

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Embodiment

[0039] This example is used to illustrate the analysis of glass defects using the reflection electron probe using the method of the present disclosure.

[0040] The glass sample adopted in this embodiment is electronic glass with a thickness of 0.5mm produced by C company, and its photo under a transmission microscope is as follows: figure 1 as shown, figure 1 In the circle, the position of the glass defect is located; the photo under the reflection microscope is as follows figure 2 shown, visible figure 2 No glass defects were observed in the glass.

[0041] Place the above glass sample under an optical transmission microscope, measure the depth of the glass defect from the upper surface of the glass to 111.71 μm, and the depth from the lower surface to 340.81 μm, mark the position of the glass defect on the upper surface of the glass, and obtain the distance from the glass defect as 0.5 ~ 2mm defect mark.

[0042] Place the glass sample on a drawing with cutting markin...

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Abstract

The invention relates to a method of using a reflection electron probe to analyze glass defects. The method is characterized by comprising following steps: step one, labeling the position of a glass defect and measuring the distance between the glass defect and the glass surface; step two, taking the glass surface, which is closest to the glass defect, as the cutting surface, and cutting the cutting surface for many times by a glass cutter to obtain a sample with multiple cutting cracks; step three, observing the cut sample, and if the distance between the position of the glass defect and at least one cutting crack is 0-0.55 mm, taking the cutting crack as the characteristic crack for positioning the glass defect under a transmission electron microscope; and step four, taking the characteristic crack as a reference substance, and positioning and analyzing the glass defect by a reflection electron probe. The method solves the problem that in the prior art, the defect positioning is notaccurate, moreover, the method is simple and fast, and no extra cost is generated.

Description

technical field [0001] The present disclosure relates to a method of analyzing glass defects using a reflection electron probe. Background technique [0002] At present, TFT glass is an indispensable material for making LCD panels. With the development of technology and the passage of time, people have higher and higher requirements for visual effects, not only requiring fast response, but also high contrast, high resolution and wide viewing angle. Glass defects will affect the yield of glass substrates, therefore, the requirements for reducing the defects of glass substrates are getting higher and higher. [0003] In the existing detection technology, there is no relevant detection method for optical defect detection of glass. Glass optical defects are visible under the microscope, in transmission (eg figure 1 white line in the circle), reflections are not visible (as in figure 2 ), the existing reflection electron probe technology cannot accurately determine the locat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N23/20
CPCG01N23/20G01N2223/102G01N2223/646
Inventor 李志勇李青郑权王丽红闫冬成李俊锋张广涛
Owner DONGXU OPTOELECTRONICS TECH CO LTD
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