Radio frequency switch circuit for improving switch-off capacitance

Abstract

The invention discloses a radio frequency switch circuit for improving switch-off capacitance. The circuit comprises a gate voltage control module, a switch module and a bulk voltage control module. The switch module comprises a plurality of cascaded switch units. Low capacitance-to-ground paths are imported among the switch units. According to the radio frequency switch circuit, in a circuit design mode of carrying out low capacitance parallel-to-ground on circuit layers or importing to-ground controllable parasitism low capacitance into latter segment design, the switch-off capacitance Coffcan be optimized and reduced, and the switch-on resistance Ron is basically kept unchanged.

Description

technical field [0001] The invention relates to a radio frequency switch circuit, in particular to a radio frequency switch circuit with improved off capacitance (Coff). Background technique [0002] figure 1 It is a schematic circuit diagram of a radio frequency switch circuit in the prior art. Such as figure 1 As shown, the radio frequency switch circuit in the prior art includes a gate voltage control module 10, a switch module 20 and a body voltage control module 30, and each of the gate voltage control module 10 and the body voltage control module 30 is composed of a common bias resistor , the switch module 20 is composed of a plurality of cascaded NMOS transistors M1, M2, ..., Mn, a plurality of body bias resistors Rbk, a plurality of gate bias resistors Rgk and a plurality of pass resistors Rdsk, the switch module 20 is connected to the gate Common bias resistors Rgc and Rbc are connected between the electrode control voltage VG and the body electrode control volta...

AI Technical Summary

Problems solved by technology

Usually, the on-resistance Ron and the off-capacitance Coff of the device need to be compromised and optimized. The product FOM is used to characterize the RF characteristics of the RF switching device, and the design and parasitics of the circuit level usually affect the FOM of the device.

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