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Wet etching technology for aluminum nitride crystals

A wet etching, aluminum nitride technology, applied in crystal growth, chemical instruments and methods, single crystal growth, etc., can solve the problems of unsuitable aluminum nitride crystal, complex sample preparation process, large sample surface, etc., to avoid Interfering with the corrosion reaction, the effect of smooth corrosion process

Inactive Publication Date: 2018-03-23
SUZHOU AOQU OPTOELECTRONICS TECH CO LTD
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  • Abstract
  • Description
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AI Technical Summary

Problems solved by technology

The quality of the material can be analyzed by observing the structure of the material through a transmission electron microscope (TEM) and an atomic force microscope (AFM), but the observation of a transmission electron microscope requires a very complicated sample preparation process, and the observation of an atomic force microscope requires a large and smooth sample surface, which is not applicable Analysis of Aluminum Nitride Crystals

Method used

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  • Wet etching technology for aluminum nitride crystals

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Experimental program
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Effect test

Embodiment 1

[0040] Select the processed aluminum nitride single crystal Al polar c-plane sample and place it in a beaker filled with acetone solution. The beaker was cleaned in an ultrasonic cleaner for 10 min, and the temperature of the ultrasonic cleaner was adjusted to 60°C during cleaning. After cleaning, dry the sample with a hair dryer and quickly put it into a sample bag to prevent re-contamination.

[0041] Weigh solid NaOH and solid KOH with a mass ratio of 51:49 and place them in a nickel crucible. Use a heating platform to heat the nickel crucible to about 400°C, and stir it evenly with a nickel rod after the solid alkali is completely melted. Solid NaOH and solid KOH take up 1 / 2 of the volume of the nickel crucible after melting.

[0042] Adjust the temperature of the NaOH-KOH eutectic mixture to 350°C, hold the dried sample with tweezers to the nickel mesh in the nickel crucible, and immerse the sample in the corrosion solution, ensuring that the surface to be observed is u...

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Abstract

The invention discloses a wet etching technology for aluminum nitride crystals. A molten NaOH-KOH eutectic mixture is used as an etching solution, and can effectively erode the surfaces of the aluminum nitride crystals to make different surfaces of the aluminum nitride crystals having different properties have different morphology features; the reasonable control of the wet etching temperature andthe wet etching time guarantees the stability of the corrosion process; and an organic solvent is used for cleaning before and after the etching, and a concentrated acid is used to wash away molten alkalis on the surfaces of the aluminum nitride crystals after the etching in order to achieve no pollutants on the surface of a sample, so the interference to the morphology observation during and after the corrosion reaction is avoided.

Description

technical field [0001] The invention relates to a wet etching process for aluminum nitride crystals. Background technique [0002] The characterization analysis of semiconductor material aluminum nitride crystal involves the evaluation of aluminum nitride crystal quality and the study of aluminum nitride crystal habit. The crystal quality and growth habit are important reference factors for optimizing the crystal growth process. The quality of the material can be analyzed by observing the structure of the material through a transmission electron microscope (TEM) and an atomic force microscope (AFM), but the observation of a transmission electron microscope requires a very complicated sample preparation process, and the observation of an atomic force microscope requires a large and smooth sample surface, which is not applicable Analysis of aluminum nitride crystals. Therefore, aluminum nitride crystal materials usually use a wet etching process to etch the surface of the sam...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10C30B29/40
CPCC30B29/403C30B33/10
Inventor 吴亮刘理想贺广东王智昊龚加玮黄嘉丽雷丹
Owner SUZHOU AOQU OPTOELECTRONICS TECH CO LTD
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