Digitally-controlled active IGBT driving circuit

Abstract

The invention discloses a digitally-controlled active IGBT driving circuit, and relates to the field of semiconductor device driving circuits. The digitally-controlled active IGBT driving circuit comprises a digital control unit, a push-pull driving circuit, an overvoltage detection circuit, a current detection circuit, a digitally-controlled current source and an IGBT; the digital control unit isused for receiving and calculating a signal sent by the current detection circuit and sending a control signal to the digitally-controlled current source by combining a PWM signal sent by the digitalcontrol unit to the push-pull circuit; the push-pull driving circuit is used for converting the PWM signal sent by the digital control unit into a driving signal available to the IGBT; and the overvoltage detection circuit is connected between the current detection circuit and the collector electrode of the IGBT, the signal output end of the push-pull driving circuit is connected with the gate electrode of the IGBT, and the digitally-controlled current source is connected with the overvoltage detection circuit. Accordingly, the precision of the IGBT driving and controlling circuit is improved, and the turn-off voltage spike of the IGBT is effectively suppressed.

Description

technical field [0001] The invention relates to the field of driving circuits for semiconductor devices, in particular to a digitally controlled active IGBT driving circuit. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor or Insulated Gate Bipolar Transistor) has the advantages of small driving power, low saturation voltage, and fast switching speed. Power supply, lighting circuit, traction drive, wind power generation, photovoltaic power generation, new energy vehicles and other fields. [0003] At present, the active clamping technology in the commonly used IGBT driving equipment cannot meet the needs of use, and there are the following shortcomings in application: [0004] 1. During the turn-off process of the IGBT, a voltage spike will be generated due to busbar noise, bus voltage fluctuations, and too much turn-off current. The overvoltage breakdown caused by the induced voltage spike during the IGBT turn-off transient will cause Larger power los...

AI Technical Summary

Problems solved by technology

[0003] At present, the active clamping technology in the commonly used IGBT driving equipment cannot meet the needs of use, and there are the following shortcomings in application:

[0004] 1. During the turn-off process of the IGBT, a voltage spike will be generated due to busbar noise, bus voltage fluctuations, and too much turn-off current. The overvoltage breakdown caused by the induced voltage spike during the IGBT turn-off transient will cause Larger power loss, the generated Joule heat promotes the cumulative rise of the junction temperature until irreversible damage occurs;

[0005] 2. The IGBT control circuit generally adopts analog circuit technology, and the control is not precise enough in the driving process;

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