A digitally controlled active igbt drive circuit

Abstract

The invention discloses a digitally controlled active IGBT drive circuit, which relates to the field of semiconductor device drive circuits, including a digital control unit, a push-pull drive circuit, an overvoltage detection circuit, a current detection circuit, a digitally controlled current source and an IGBT; It is used to receive and calculate the signal sent by the current detection circuit, and combine the PWM signal sent by the digital control unit to the push-pull circuit to send a control signal to the numerical control current source; the push-pull drive circuit is used to convert the PWM signal sent by the digital control unit into an IGBT Available drive signals; the overvoltage detection circuit is connected between the current detection circuit and the collector of the IGBT, the signal output end of the push-pull drive circuit is connected to the gate of the IGBT, and the digital current source is connected to the overvoltage detection circuit. The invention improves the accuracy of the IGBT drive control circuit and effectively suppresses the IGBT turn-off voltage peak.

Description

technical field [0001] The invention relates to the field of driving circuits for semiconductor devices, in particular to a digitally controlled active IGBT driving circuit. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor or Insulated Gate Bipolar Transistor) has the advantages of small driving power, low saturation voltage, and fast switching speed. Power supply, lighting circuit, traction drive, wind power generation, photovoltaic power generation, new energy vehicles and other fields. [0003] At present, the active clamping technology in the commonly used IGBT driving equipment cannot meet the needs of use, and there are the following shortcomings in application: [0004] 1. During the turn-off process of the IGBT, a voltage spike will be generated due to busbar noise, bus voltage fluctuations, and too much turn-off current. The overvoltage breakdown caused by the induced voltage spike during the IGBT turn-off transient will cause Larger power los...

AI Technical Summary

Problems solved by technology

[0003] At present, the active clamping technology in the commonly used IGBT driving equipment cannot meet the needs of use, and there are the following shortcomings in application:

[0004] 1. During the turn-off process of the IGBT, a voltage spike will be generated due to busbar noise, bus voltage fluctuations, and too much turn-off current. The overvoltage breakdown caused by the induced voltage spike during the IGBT turn-off transient will cause Larger power loss, the generated Joule heat promotes the cumulative rise of the junction temperature until irreversible damage occurs;

[0005] 2. The IGBT control circuit generally adopts analog circuit technology, and the control is not precise enough in the driving process;

Images