Insulated gate bipolar transistor (IGBT) driving circuit

A technology of bipolar transistors and drive circuits, which is applied in the direction of improving the reliability of bipolar transistors, field effect transistors, and fail-safe circuits. It can solve problems such as damage to IGBTs and achieve protection without damage and reduce The effect of voltage

Active Publication Date: 2018-02-16
BEIJING ELECTRIC VEHICLE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the embodiments of the present invention is to provide an insulated gate bipolar transistor drive circuit to solve the problem that the gate overvoltage of the IGBT will damage the IGBT

Method used

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  • Insulated gate bipolar transistor (IGBT) driving circuit

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Embodiment Construction

[0042] In order to make the technical problems, technical solutions and advantages to be solved by the present invention clearer, the following will describe in detail with reference to the drawings and specific embodiments. In the following description, specific details, such as specific configurations and components, are provided only to assist in a comprehensive understanding of the embodiments of the present invention. Accordingly, those of ordinary skill in the art should recognize that various changes and modifications of the embodiments described herein can be made without departing from the scope and spirit of the invention. Also, descriptions of well-known functions and constructions are omitted for clarity and conciseness.

[0043] It should be understood that reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic related to the embodiment is included in at least one embodiment of t...

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Abstract

The invention provides an insulated gate bipolar transistor (IGBT) driving circuit. The IGBT driving circuit comprises a primary side power supply circuit, a secondary side power supply circuit and aprotection circuit, wherein the secondary side power supply circuit is connected with the primary side power supply circuit; the secondary side power supply circuit comprises a high side driving circuit and a low side driving circuit; the high side driving circuit and the low side driving circuit are connected with each other, and output an electric signal to a grid of an IGBT in a cooperative way; a first end of the protection circuit is connected to the grid of the IGBT; a second end of the protection circuit is connected to the high side driving circuit; and when the voltage of the first end of the protection circuit is higher than the voltage of the second end of the protection circuit, the protection circuit is switched on. In the embodiment of the invention, the protection circuit isarranged, and the voltage of the first end of the protection circuit is higher than the voltage of the second end of the protection circuit when the grid of the IGBT is in an overvoltage state to switch on the protection circuit, so that the voltage of the grid of the IGBT is fed back to the high side driving circuit, and the IGBT is protected from being damaged when the grid of the IGBT is in the overvoltage state.

Description

technical field [0001] The invention relates to the technical field of circuit design, in particular to an insulated gate bipolar transistor driving circuit. Background technique [0002] The motor controller used in the field of electric vehicles converts the DC power of the high-voltage power battery into a three-phase AC power that controls the rotation of the traction motor, thereby controlling the normal driving of the electric vehicle. The whole controller is composed of a high-voltage input filter circuit, a sampling circuit, an auxiliary power supply, a drive circuit, an inverter circuit, an external signal acquisition circuit, and a control circuit. [0003] The gate-emitter drive voltage U of the insulated gate bipolar transistor (IGBT, Insulated Gate Bipolar Transistor) in the drive circuit GE The guaranteed value of the IGBT is ±20V. If a voltage exceeding the guaranteed value is applied between its gate and the emitter, the IGBT may be damaged. In addition, if...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K19/003H03K19/007H03K19/0175
CPCH03K19/00307H03K19/00315H03K19/00353H03K19/00361H03K19/007H03K19/017518
Inventor 武盼盼葛亮苏伟蒋荣勋
Owner BEIJING ELECTRIC VEHICLE
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