Semiconductor ion energy generation method
A semiconductor and ion energy technology, applied in the field of semiconductor ion energy power generation, can solve the problems of environmental pollution, resource consumption, low efficiency, etc., and achieve the effect of not polluting the environment and producing no noise
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Embodiment 1
[0036] Such as figure 1 As shown, the semiconductor ion power generation method described in the present embodiment, ionic liquid 2 is built into the container 1, and then a group of power generation units are built into the ionic liquid 2, and the power generation unit includes a pair of P-type semiconductor chips 3 and The N-type semiconductor sheet 4, the electric field of the P-type semiconductor sheet 3 and the N-type semiconductor sheet 4 interact with the ionic electric field in the ionic liquid 2, and the positively charged ions in the ionic liquid 2 flow to the N-type semiconductor sheet 4 under the action of the electric field, Negatively charged ions in the ionic liquid 2 flow to the P-type semiconductor sheet 3 under the action of an electric field, and the conductive ends are respectively connected by the P-type semiconductor sheet 3 and the N-type semiconductor sheet 4, figure 1 The middle conducting end adopts wires, which are the positive electrode lead 5 drawn...
Embodiment 2
[0039] Such as Figure 2-3 As shown, the present embodiment increases the number of P-type semiconductor slices 3 and N-type semiconductor slices 4 on the basis of Embodiment 1, such as figure 2 As shown, the P-type semiconductor sheet 3 includes two layers, and the two-layer P-type semiconductor sheet 3 is respectively fixed on the two sides of the conductive substrate 7, and the conductive substrate 7 is provided with a pole 8, and the conductive substrate 7 is opposite to the P Type semiconductor chip 3 or N-type semiconductor chip 4 plays a supporting role, and the material can be selected as metal copper; On the substrate 7, the gap between the P-type semiconductor unit pieces 15 is filled with an insulating sealant 13, and the conductive substrate 7 is coated with an insulating sealant 13 on the exposed part of the ionic liquid 2, so as to ensure that the conductive substrate 7 is insulated and conductive to the ionic liquid 2 The glue 14 can be conductive silver glue ...
Embodiment 3
[0042] Such as Figure 4 As shown, on the basis of Embodiment 1, the present invention replaces the P-type semiconductor sheet 3 with an active metal sheet 10. The active metal sheet 10 can be made of aluminum, iron, zinc, etc. Taking metal aluminum as an example, the densely doped When the N-type semiconductor sheet 4 and metal aluminum are placed in the ionic liquid 2, because there is a large amount of electrons in the N-type semiconductor sheet 4, there are very few free electrons in the metal aluminum, and there are almost no holes. Positive ion charges are exchanged with the electronic field of N-type semiconductor sheet 4 under the action of ion electric field, a large amount of positive ion charges enter N-type semiconductor sheet 4, and a large number of electrons in N-type semiconductor sheet 4 enter ionic liquid 2 to form a current, through the conduction The terminal is connected to the electric load to supply power to the load. This power generation method has a f...
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