Stage structure of three-dimensional memory and formation method of stage structure
A memory and step technology, which is applied in the manufacture of electrical solid-state devices, semiconductor devices, semiconductor/solid-state devices, etc., can solve the problems of complex process, large volume of 3D memory, high production cost of 3D memory, etc., to reduce production cost and volume Effect
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Embodiment 1
[0032] According to an embodiment of the present invention, a step structure in a three-dimensional memory is provided, such as figure 1 and figure 2 shown, including:
[0033] Substrate;
[0034] An array stack structure on a substrate;
[0035] The array stack structure includes multiple layers of nitride layers and oxide layers deposited alternately with a preset thickness, and the nitride layer is located between adjacent oxide layers;
[0036] A step structure with three regions and multi-layer steps is formed by performing three etching processes in the Y direction and multiple times in the X direction on the array stack structure through a mask plate.
[0037] Wherein, the substrate is preferably a silicon substrate;
[0038] It should be noted that the number of nitride layers and oxide layers in the array stack structure depends on requirements, figure 2 For example only.
[0039] According to an embodiment of the present invention, the predetermined thickness...
Embodiment 2
[0046] According to an embodiment of the present invention, a method for forming a step structure suitable for the three-dimensional memory described in Embodiment 1 is provided, such as image 3 shown, including:
[0047] provide the substrate;
[0048] An array stack structure is formed on the substrate, the array stack structure includes multiple layers of nitride layers and oxide layers deposited alternately with a preset thickness, and the nitride layer is formed between adjacent oxide layers;
[0049] Use a mask plate to etch the array stack structure three times in the Y direction to obtain the corresponding three regions, and perform multiple times of etching in the X direction on the array stack structure containing three regions through the same mask plate The etching process obtains a stepped structure containing multiple steps.
[0050] Wherein, the substrate is preferably a silicon substrate, and the number of nitride layers and oxide layers in the array stack s...
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