Ridge array semiconductor laser and manufacturing method thereof

Abstract

The invention provides a ridged array semiconductor laser. The laser comprises a substrate and an epitaxial structure formed on the substrate. A top of the epitaxial structure is provided with a ridged semiconductor layer. The ridged semiconductor layer comprises a plurality of ridged portions. Widths of the plurality of ridged portions are not equal. By using the ridged array semiconductor laser,through setting the plurality of ridged portions on the top of the epitaxial structure, the widths of the plurality of ridged portions are not equal and a temperature difference between an active area center and two sides of the active area when the laser works can be reduced so that temperature distribution of a whole laser structure is uniform and output characteristics are consistent when thelaser works.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a ridge array semiconductor laser and a manufacturing method thereof. Background technique [0002] Gallium Nitride (GaN)-based laser is a very important base optoelectronic device. Because the light waves it emits cover the wavelength range from ultraviolet to green light, GaN-based lasers are used in high-density optical information storage, projection display, laser printing, water, etc. It has important application value in communication, activation of biochemical reagents and medical treatment. [0003] Among the current semiconductor lasers, gallium nitride-based lasers all adopt a ridge waveguide structure, which can confine light and current in the direction parallel to the junction, so that the injected current is confined in the active region under the ridge shape, limiting The lateral diffusion of carriers reduces the threshold current. However, for the common...

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Problems solved by technology

The P confinement layer of the laser is adjacent to the active region, and the temperature difference between the two is small, so that the internal structure of the laser has uneven temperature distribution.

The temperature steps inside and outside the ridge affect the limitation of the waveguide to the high-order mode of the laser, reduce the threshold current, and increase the slope efficiency, while the temperature rise in the active region will lead to a serious decline in the slope efficiency, which seriously affects the application of the laser in real life and production.

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