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Antimony selenide thin film solar cell and preparation method thereof

A technology of solar cells and antimony selenide, applied in circuits, electrical components, photovoltaic power generation, etc., can solve problems such as endangering human health, environmental pollution, and unstable device performance, and achieve improved photocurrent, stable chemical properties, and improved stability sexual effect

Inactive Publication Date: 2018-01-05
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the above defects or improvement needs of the prior art, the present invention provides an antimony selenide thin film solar cell and its preparation method, thereby solving the problem that the existing n-type layer will cause environmental pollution, endanger human health and unstable device performance technical issues

Method used

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  • Antimony selenide thin film solar cell and preparation method thereof
  • Antimony selenide thin film solar cell and preparation method thereof
  • Antimony selenide thin film solar cell and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0040] The first step is to use ultrasonic cleaning method to ultrasonically clean ITO or FTO glass according to the following steps, each step is 30 minutes, and the heating temperature is 20-50°C: detergent + deionized water, acetone, isopropanol, ethanol, deionized water . After cleaning, blow dry with nitrogen.

[0041]In the second step, a tin oxide film is prepared by spraying pyrolysis. Weigh 0.285g of stannous chloride, dissolve it in 20mL of deionized water, then add 5 drops of hydrochloric acid with a mass fraction of 36%, shake it to dissolve evenly, and put the cleaned 5cm×5cm FTO glass on the hot stage , adjust the temperature of the hot stage to 400°C and preheat for 10 minutes, put the precursor solution into the spray gun for spraying, after the spraying is completed, keep the temperature of the hot stage at 480°C, and perform annealing treatment for 30 minutes, then turn off the hot stage and let it Allow to cool naturally.

[0042] In the third step, the a...

Embodiment 2

[0046] The first step is to use the ultrasonic cleaning method to ultrasonically clean the FTO glass according to the following steps, each step is 30 minutes, and the heating temperature is 20-50°C: detergent + deionized water, acetone, isopropanol, ethanol, deionized water. After cleaning, blow dry with nitrogen.

[0047] In the second step, a tin oxide film is prepared by spraying pyrolysis. Weigh 0.285g of stannous chloride, dissolve it in 20mL of deionized water, then drop in 7 drops of hydrochloric acid with a mass fraction of 37%, shake it to dissolve evenly, put the cleaned FTO glass of 5cm×5cm on the hot stage , adjust the temperature of the hot stage to 430°C and preheat for 9 minutes, put the precursor solution into the spray gun and spray. Allow to cool naturally.

[0048] In the third step, the antimony selenide thin film is deposited by rapid thermal evaporation. Weigh 0.38g of antimony selenide powder and place it in the evaporation source. Set the evaporatio...

Embodiment 3

[0051] The first step is to use ultrasonic cleaning method to ultrasonically clean ITO or FTO glass according to the following steps, each step is 30 minutes, and the heating temperature is 20-50°C: detergent + deionized water, acetone, isopropanol, ethanol, deionized water . After cleaning, blow dry with nitrogen.

[0052] In the second step, a tin oxide film is prepared by spraying pyrolysis. Weigh 0.285g of stannous chloride, dissolve it in 20mL of deionized water, then add 10 drops of hydrochloric acid with a mass fraction of 38%, shake it to dissolve evenly, and put the cleaned 5cm×5cm FTO glass on the hot stage , adjust the temperature of the hot stage to 380°C and preheat for 15 minutes, put the precursor solution into the spray gun for spraying. Allow to cool naturally.

[0053] In the third step, the antimony selenide thin film is deposited by rapid thermal evaporation. Weigh 0.38g of antimony selenide powder and place it in the evaporation source. Set the evapora...

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Abstract

The invention discloses an antimony selenide thin film solar cell and a preparation method thereof. The cell comprises a conductive substrate, an n-type layer, a p-type layer and an electrode, whereinthe n-type layer is a tin oxide thin film, and the p-type layer is an antimony selenide thin film. Compared with a traditional n-type layer cadmium sulfide, tin oxide used in the antimony selenide thin film is green and non-toxic and can be used for a novel green and non-toxic antimony selenide thin film solar cell; and moreover, the tin oxide is large in energy gap and stable in chemical property, the light absorption of the cell on a short wave band can be improved, a light current of the cell is increased, and higher device stability is obtained. By the method, the high-efficiency, green and non-toxic antimony selenide thin film solar cell is expected to be obtained.

Description

technical field [0001] The invention belongs to the field of photoelectric materials and thin-film solar cell preparation, and more specifically relates to an antimony selenide thin-film solar cell and a preparation method thereof. Background technique [0002] Due to the current energy shortage and increasingly serious environmental pollution problems, people are paying more and more attention to the development and utilization of other renewable energy sources on the earth. Among the many renewable energy sources, solar energy has the most development prospect. According to statistics, the solar energy absorbed by the earth's atmosphere, oceans and land is about 3.85×10 24 J, One hour of solar energy is more energy than the entire world used in 2002. Solar cells prepared based on the photovoltaic effect can convert solar energy into electrical energy, and this way of generating electrical energy will not cause environmental pollution during the conversion process, which i...

Claims

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Application Information

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IPC IPC(8): H01L31/0445H01L31/0216H01L31/032H01L31/18
CPCY02E10/50Y02P70/50
Inventor 唐江鲁帅成牛广达陈超赵洋李康华
Owner HUAZHONG UNIV OF SCI & TECH
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