Novel silicon carbide silicon single crystal

Abstract

The invention relates to a novel silicon carbide single crystal furnace which comprises a crucible, wherein a crucible cover is arranged above the crucible; a lower crystal growth platform is arranged on the inner side of the bottom of the crucible; an upper crystal growth platform is arranged on the lower end surface of the crucible; a material room is arranged on the inner wall of the crucible; a rotary mechanism is arranged on the outer side of the bottom of the crucible; an insulating layer is arranged out of the crucible; the crucible and the crucible cover are arranged in a reaction chamber; an induction coil is arranged out of the reaction chamber; the distributing height of the induction coil accounts for 2 / 3-4 / 5 of the height of the reaction chamber; the inner diameter length of the crucible accounts for 3 / 5-4 / 5 of that of the reaction chamber; and a pressure control device and a monitoring device are arranged on the reaction chamber. The novel silicon carbide single crystal furnace provided by the invention is reasonable in structural configuration, precise to control and high in product quality.

Description

technical field [0001] The invention relates to a crystal production device, in particular to a silicon carbide crystal production device. Background technique [0002] At present, the structure of the silicon carbide crystal growth device is unreasonable, the working temperature and pressure are not easy to control, and the incomplete axis symmetry of the induction coil leads to the incomplete axis symmetry of the crystal growth temperature field generated by the graphite crucible, resulting in asymmetric crystal growth. Contents of the invention [0003] Purpose of the invention: The purpose of the invention is to overcome the deficiencies in the prior art and provide a new silicon carbide single crystal furnace with reasonable structure, precise control and high product quality. [0004] Technical solution: In order to solve the above technical problems, a novel silicon carbide single crystal furnace according to the present invention includes a crucible, a crucible cov...

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Problems solved by technology

[0002] At present, the structure of the silicon carbide crystal growth device is unreasonable, the working temperature and pressure are not easy to control, and the induction coil is not completely axisymmetric, which leads to the incomplete axisymmetric crystal growth temperature field generated by the graphite crucible, resulting in asymmetric crystal growth.

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