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High-voltage-withstand transverse super junction device

A super junction device, high withstand voltage technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as breakdown, affecting device withstand voltage, charge imbalance, etc., to improve device withstand voltage and reduce on-resistance , the effect of maintaining charge balance

Inactive Publication Date: 2017-11-17
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in actual device manufacturing, due to various reasons, the charge imbalance between the second doping type strip and the first doping type strip is easy to generate a high electric field at the edge of the device, causing premature breakdown and affecting the device performance. withstand voltage

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0038] Such as figure 1 As shown, a high withstand voltage lateral superjunction device, its cell structure includes a second doping type substrate 1, a first doping type drift region 9, a second doping type strip 14, a first doping type strip 12. The first doping type source heavily doped region 32, the second doping type source heavily doped region 34, the second doping type well region 24, the first doping type well region 22, the second doping type well region Type multi-faceted depletion region 3, first doping type multi-faceted depletion region 4, first doping type drain heavily doped region 42, source contact electrode 5, drain contact electrode 6, polysilicon gate 7, gate oxide layer 8. In the first doping type drift region 9, the first doping type strips 12 and the second doping type strips 14 are alternately arranged along the Z positive direction, and at least one of the left surface and the right surface forms a multi-faceted depletion region , when the left surfa...

Embodiment 2

[0040] Such as figure 2 As shown, this embodiment is basically the same as Embodiment 1, the difference is that a buried oxide layer 2 is introduced between the second doped type substrate 1 and the first doped type drift region 9, and the upper surface of the buried oxide layer 2 is connected to the first doped type drift region 9. The lower surface of the drift region 9 of one doping type is connected, and the lower surface is connected with the upper surface of the substrate 1 of the second doping type.

[0041] Specifically, in the SOI cellular structure, the substrate 1 may be of the second doping type or the first doping type.

Embodiment 3

[0043] Such as image 3 As shown, this embodiment is basically the same as Embodiment 1, except that a second doping is provided between the substrate 1 of the second doping type, the well region 24 of the second doping type and the drift region 9 of the first doping type. Type buried layer 10. Lower the resistance at the bottom of the second doped well region to prevent the opening of the life-saving tube.

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Abstract

The invention provides a high-voltage-withstand transverse super junction device. First doped type bars and second doped type bars which are alternated form a super junction structure; a second doped type multi-surface exhausting region is formed at an intersection of a second doped type well region and a region where the second doped type bars and the first doped type bars appear alternately; the second doped type bars and the second doped type well region form a three-surface exhausted structure for the first doped type bars; the left side and the right side are based on the same way; a first doped type multi-surface exhausting region exists on the right; and therefore, influence of an edge region on the voltage withstand of the device is reduced, a charge balance is remained, and the aims of avoiding in-advance breakdown by eliminating a high electric field at a super junction point AB and enhancing the voltage withstand of the device are fulfilled. As the peak of edge voltage is suppressed, under a condition of remaining high voltage withstand, the on-state resistance is reduced by further increasing the doping concentration of super junction bars; and therefore, the aims of eliminating the high electric field at the super junction point AB, enhancing the voltage withstand of the device and reducing the specific on-state resistance are finally fulfilled.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and in particular relates to a high withstand voltage lateral superjunction device. Background technique [0002] The development of modern power electronics technology requires power devices to have superior high-voltage, high-speed, and low-power consumption performance. In order to meet high withstand voltage, traditional power MOSFETs need to reduce the concentration of the drift region or increase the length of the drift region, but the on-resistance also increases accordingly. increase, so in traditional power device applications, on-resistance and breakdown voltage are contradictory bodies, and the two have a limit relationship as R on ∝BV 2.5 . Superjunction (SJ) devices, as a new type of power device, can further improve the withstand voltage of the device and reduce the specific on-resistance. In super-junction MOSFETs, the 1.3-power relationship between specific ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/78
CPCH01L29/0615H01L29/0634H01L29/78H01L29/7816H01L29/7825
Inventor 章文通余洋李珂詹珍雅梁龙飞乔明张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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