Three-dimensional detector with long honeycomb shell electrode

Abstract

The invention discloses a long honeycomb shell electrode three-dimensional detector. A long honeycomb trench electrode is obtained by etching the upper part of a silicon substrate without penetrating one side from the top to the bottom, a heptagonal trench electrode is obtained by etching the lower part of the silicon substrate without penetrating one side from the bottom to the top, the long honeycomb trench electrode is superposed with the heptagonal trench electrode in the Z axis, the parts, that don't overlap in the plane where the X axis and the Y axis are, of the long honeycomb trench electrode and the heptagonal trench electrode enclose a first dead zone together with the outer surface of the heptagonal trench electrode, a center electrode subjected to penetrated etching surrounds the center of the trench electrode, the upper surface of the center electrode is provided with an anode metal contact layer, the upper surface of the trench electrode is provided with a cathode metal contact layer, and a plurality of long honeycomb shell electrode three-dimensional detectors are arranged in a mirroring manner, or are arranged in an array according to the vertically and mutually orthogonal manner. The long honeycomb shell electrode three-dimensional detector solves the problems of poor charge collection performance, low position resolution, large fabrication process difficulty, more signal readout routes, and high cost of a detector in the prior art.

Description

technical field [0001] The invention belongs to the technical field of three-dimensional silicon detectors, and relates to a three-dimensional detector with long honeycomb shell electrodes. Background technique [0002] Detectors are mainly used in the fields of high-energy physics and astrophysics. The traditional "three-dimensional silicon detector" has many deficiencies. For example, there is a silicon substrate with a thickness of 30% d at the bottom (d is the overall thickness of the detector). The silicon substrate only has the function of supporting the silicon body. Due to the influence of the weak electric field, the drift speed of this layer is very small, so there are many particles trapped by the deep level defects caused by strong radiation due to the low speed drift in this layer. In addition, the particles cannot enter the detector on both sides. [0003] The prior art (application number: 201620359775.2, name: a new type of closed shell electrode silicon det...

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Problems solved by technology

[0004] In order to achieve the above object, the present invention provides a three-dimensional detector with long honeycomb shell electrodes. The dead zone of the detector is concentratedly distributed on the edge of the detector array, so that the distribution density of the dead zone on the sensitive zone is zero, and the area of ​​the dead zone is reduced. It solves the problems of poor charge collection performance, low position resolution, difficult manufacturing process, many signal readout routes and high cost of the detector in the prior art

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