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InP/ GaP/ ZnS nucleocapsid quantum dots and preparation method thereof

A core-shell quantum dot and quantum dot technology, which is applied in the field of InP/GaP/ZnS core-shell quantum dots and their preparation, can solve the problem of low quantum yield of quantum dots with related core-shell structures, difficulty in effective growth of ZnS shells, and crystallinity. The problem of poor lattice matching degree, etc., can improve the growth of ZnS shell, be easy to control, and reduce the lattice difference.

Active Publication Date: 2017-11-10
深圳天吉新创科技有限公司
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  • Application Information

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Problems solved by technology

However, in the synthesis process from InP to InP / ZnS and other core-shell structures, due to the poor lattice matching between the two, it is difficult for the ZnS shell to grow effectively on the surface of InP, making the quantum yield of related core-shell structure quantum dots relatively low. Low, usually the thickness of the quantum dot shell with high synthetic quality does not exceed 2nm and the stability is poor, which limits its related applications

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  • InP/ GaP/ ZnS nucleocapsid quantum dots and preparation method thereof
  • InP/ GaP/ ZnS nucleocapsid quantum dots and preparation method thereof
  • InP/ GaP/ ZnS nucleocapsid quantum dots and preparation method thereof

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[0025] One aspect of the present invention provides a method for preparing InP / GaP / ZnS core-shell quantum dots, which includes the following steps:

[0026] S1. Dissolving the indium precursor, gallium precursor and zinc precursor in an organic solvent to obtain an indium gallium zinc mixed precursor solution;

[0027] S2. Add a phosphorus precursor to the indium gallium zinc mixed precursor solution, and obtain an InP / GaP:Zn quantum dot core solution after the reaction;

[0028] S3. Add shell material to the InP / GaP:Zn quantum dot core solution multiple times at intervals for reaction, and the shell material is a mixed solution of zinc salt solution and mercaptan to obtain the InP / GaP / ZnS core Shell quantum dots.

[0029] According to a specific embodiment of the present invention, the indium precursor includes at least one of indium acetate, indium iodide, indium chloride, indium oleate, and indium stearate.

[0030] According to a specific embodiment of the present invention, the ga...

Embodiment 1

[0054] In this embodiment, the indium precursor is indium acetate, the gallium precursor is gallium chloride, the zinc precursor and the zinc salt are both zinc oleate, and the phosphorus precursor is tris(trimethylsilyl) ) Phosphorus, the thiol is an octaalkyl bidentate thiol. The organic solvent is a mixed liquid of liquid paraffin and oleic acid.

[0055] (1) Preparation of quantum dot core InP / GaP solution.

[0056] Take 0.3mmol of indium acetate, 0.1mmol of gallium chloride and 0.8mmol of zinc oleate and add them to a 100mL three-necked flask, and then add 10mL of liquid paraffin and 1mL of oleic acid. Exhaust air at 100°C for 40 minutes under the protection of nitrogen, then reduce to room temperature and add 0.5mmol tris(trimethylsilyl)phosphorus, then react at room temperature for 15 minutes and then quickly heat to 280°C for 20 minutes to obtain InP / GaP quantum dots Nuclear solution.

[0057] (2) Synthesis of the quantum dot shell ZnS coating the quantum dot core InP / GaP....

Embodiment 2

[0081] The preparation method of the InP / GaP / ZnS core-shell quantum dots of embodiment 2: refer to the preparation method of embodiment 1, except that the molar amount of Ga added when synthesizing the quantum dot core InP / GaP is 0.2 mmol, and other parameters are the same. The particle size of the InP / GaP / ZnS core-shell quantum dot is about 8.3 nm, the thickness of the shell layer is 3.1 nm, and the quantum yield is 70%.

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Abstract

The invention provides a preparation method of InP / GaP / ZnS nucleocapsid quantum dots. The preparation method comprises the following steps of dissolving an indium precursor, a gallium precursor and a zinc precursor in organic solvent, and obtaining a mixed precursor solution of indium, gallium and zinc; adding a phosphorus precursor to the mixed precursor solution of indium, gallium and zinc, and obtaining an InP / GaP: Zn quantum dot nuclear solution after a reaction; adding a shell material, which is a mixed solution of a zinc salt solution and thiol, into the InP / GaP: Zn quantum dot nuclear solution multiple times at intervals for a reaction, and obtaining the InP / GaP / ZnS nucleocapsid quantum dots. The preparation method is simple in synthesis process, the quantum yield can reach 60-90%, and the fluorescent wavelength range is 510-650 nm; the InP / GaP / ZnS nucleocapsid quantum dots prepared by the preparation method are thick in shell and good in stability.

Description

Technical field [0001] The invention relates to the field of quantum dot materials, in particular to an InP / GaP / ZnS core-shell quantum dot and a preparation method thereof. Background technique [0002] Semiconductor fluorescent quantum dots (QDs) have excellent optical properties such as high fluorescence quantum yield, strong photochemical stability, good monochromaticity, and continuous adjustment of fluorescence emission peak position with particle size. In recent years, light-emitting devices based on quantum dots, biological detection, etc. have aroused extensive research interest. Currently, quantum dots used in high-performance devices and good biological detection are mostly based on II-VI quantum dots. Due to the inherent toxicity of Cd, Hg and other heavy metal quantum dots, their practical applications are strictly limited. Among many quantum dots, InP-based quantum dots not only have narrow emission peaks similar to II-VI quantum dots, higher luminescence stability ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/70B82Y20/00B82Y30/00B82Y40/00
CPCB82Y20/00B82Y30/00B82Y40/00C09K11/70
Inventor 白洁恒蔚宏
Owner 深圳天吉新创科技有限公司
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