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Fault prediction and health processing method and test system of power MOSFET

A technology of fault prediction and processing methods, which is applied in the direction of single semiconductor device testing, measuring electricity, measuring devices, etc., and can solve the problems that simulation calculations depend on the host computer and cannot be used

Active Publication Date: 2017-11-03
深圳市智鼎自动化技术有限公司
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Problems solved by technology

[0003] At present, a large amount of experimental equipment is needed in the research of life prediction, and the simulation calculation depends on the host computer, which cannot be used in actual products.

Method used

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  • Fault prediction and health processing method and test system of power MOSFET
  • Fault prediction and health processing method and test system of power MOSFET

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Embodiment Construction

[0035]In order to make the object, technical solution and advantages of the present invention more clear and definite, the present invention will be further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0036] like figure 1 As shown, when the power MOSFET fault prediction and health treatment method of the embodiment of the present invention is applied to the power MOSFET device in the PLC equipment, the device with normal performance characteristics is selected as the test sample, and the normal device is tested by aging test on the sample. During the aging process, the three parameters of drain-source voltage, drain current, and device shell temperature are analyzed and the device characteristic parameter R is established by analyzing the test data. ds(on) Based on the prior degradati...

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Abstract

The invention discloses a fault prediction and health processing method and a test system of a power MOSFET. The method comprises specific steps of selecting an MOSFET device with the normal performance and features to be a test sample; by testing three parameters of the drain and source electrode voltage, the drain electrode current and the device housing temperature of the normal device in the aging process, analyzing the test data and establishing a prior deterioration model E based on a feature parameter Rds(on); determining a failure threshold value; using test data of an actual to-be-detected device to train the model E; correcting the feature parameter of the model; and by calculating and predicting the remaining life of the MOSFET device, outputting a health estimation result and carrying out health processing on the device. According to the invention, there is no need to use a large test device and a complex experiment environment, so the prediction accuracy is high; the performance of the prediction algorithm is high; and probability of false prediction can be greatly reduced.

Description

technical field [0001] The invention relates to the field of power MOSFET devices, in particular to a power MOSFET fault prediction and health processing method and a test system. Background technique [0002] A large number of PLC (programmable logic controller) products are used in modern industry. The failure of PLC equipment usually leads to unexpected shutdown of production equipment, and even damages related equipment that works with it, which affects production efficiency and increases operation and maintenance costs. The common causes of PLC equipment failure are Output MOSFET and other high-power working nodes fail; by detecting the working status of the nodes and analyzing the data, the remaining working life of the equipment is predicted, and the results are fed back to the control center, which is conducive to the production system to make overall maintenance decisions and improve production efficiency . [0003] At present, a large amount of experimental equipm...

Claims

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Application Information

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IPC IPC(8): G01R31/26
CPCG01R31/2621
Inventor 林成熙欧东吴楷龙
Owner 深圳市智鼎自动化技术有限公司
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