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Bonding heating control device and method thereof

A technology of heating control device and heating device, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of heating temperature oscillation, heating time is too long, heating is unstable, etc., to improve productivity, Improves the heating effect and reduces the effect of the vibration effect

Active Publication Date: 2017-10-24
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a bonding heating control device and its method, which can solve the problems in the prior art that the heating time is too long, the heating is unstable, and the heating temperature oscillates

Method used

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  • Bonding heating control device and method thereof
  • Bonding heating control device and method thereof
  • Bonding heating control device and method thereof

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Embodiment Construction

[0034] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings of the specification. Of course, the present invention is not limited to this specific embodiment, and general replacements well known to those skilled in the art are also covered by the protection scope of the present invention.

[0035] Secondly, the present invention uses schematic diagrams to describe in detail. When describing the examples of the present invention, for convenience of explanation, the schematic diagrams are not partially enlarged in accordance with the general scale and should not be used as a limitation of the present invention.

[0036] The core idea of ​​the present invention is: the temperature of each temperature sensor in the two heating devices is measured by the heating controller, and the PWM opening degrees of the heaters in the two heating devic...

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PUM

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Abstract

The invention provides a bonding heating control device and a method thereof. The device comprises a heating controller, two heating devices and two heating driving devices. Each heating device is used for heating and pressurizing a silicon wafer or a glass sheet. Each heating device is provided with a heater and at least two temperature sensors. The heating controller is used for measuring each temperature sensor in the two heating devices and outputting PWM opening of a heater. Each heating driving device drives the heater to work according to the PWM opening output by the heating controller. The two heating devices work independently at the same time so that heating time is saved and heating efficiency is improved. Graphite pieces are arranged on upper and lower sides of a heating disc so as to make the temperature spread evenly. Meanwhile, a heating process is divided into three stages, rapid heating in a rate heating stage shortens the heating time and increases a yield; and adjustable power in a heating rate stage is realized and more process parameters are provided for a bonding process.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a bonding heating control device and a method thereof. Background technique [0002] Two wafers with flat and clean surfaces can be combined with each other through chemical bonds on the surface under certain conditions, without being restricted by the lattice and crystal orientation of the two wafer materials. This technology is called wafer bonding technology . The use of bonding technology to combine new structural materials has a great degree of freedom, so it is widely used in microelectronic circuits, sensors, power devices, micromachining, optoelectronic devices, silicon insulators (SOI) and other fields. Wafer bonding technology has become a technology that can be used to make many important optoelectronic devices. [0003] Wafer bonding technology can bond wafers of different materials together. Wafer bonding is an important process in the three-dimensional pr...

Claims

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Application Information

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IPC IPC(8): H01L21/67H01L21/60
CPCH01L21/67098H01L24/03
Inventor 罗晋商飞祥
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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