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A silicon wafer cleaning method after diamond wire dicing

A technology of diamond wire cutting and silicon wafer cleaning, which is applied in the field of silicon wafer cleaning and silicon wafer after diamond wire cutting, which can solve the problems of uneven texture on the surface, and achieve the effect of uniform texture and high coverage

Active Publication Date: 2020-02-21
SHANXI LUAN PHOTOVOLTAICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention is: how to avoid the problem of non-uniform texturing on the surface of silicon wafers in the subsequent battery alkaline washing texturing process due to the failure to clean up the silicon wafers after diamond wire cutting

Method used

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  • A silicon wafer cleaning method after diamond wire dicing
  • A silicon wafer cleaning method after diamond wire dicing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] A method for cleaning a silicon wafer after diamond wire dicing is carried out according to the following steps:

[0019] A citric acid aqueous solution with a mass percentage concentration of 3%, a sodium hydroxide solution (aqueous solution) with a mass percentage concentration of 5%, and a hydrogen peroxide solution (aqueous solution) with a volume percentage concentration of 4%.

[0020] Clean the silicon wafers after diamond wire cutting in the following tanks in sequence

[0021] 1# tank: clean with pure water+overflow+ultrasonic method, the cleaning temperature is 40-50℃, and the cleaning time is 200s; the purpose is to remove large particles of impurities remaining on the surface of silicon wafers after diamond wire cutting.

[0022] 2# tank: use 3% citric acid aqueous solution + ultrasonic cleaning, cleaning temperature 40-50 ℃, cleaning time 180s; the purpose is to remove organic matter and metal ions remaining on the surface of the silicon wafer.

[0023] 3#...

specific Embodiment 2

[0033] The difference from specific example 1 is that the mass percent concentration of the citric acid aqueous solution is 5%, the mass percent concentration of the sodium hydroxide solution (aqueous solution) is 8%, and the percent concentration of the hydrogen peroxide solution (aqueous solution) is 8%.

specific Embodiment 3

[0035] The difference from specific example 1 is that the mass percent concentration of the citric acid aqueous solution is 4%, the mass percent concentration of the sodium hydroxide solution (aqueous solution) is 6%, and the percent concentration of the hydrogen peroxide solution (aqueous solution) is 6%.

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PUM

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Abstract

The invention relates to the field of silicon wafer cleaning, particularly to the field of silicon wafers after diamond wire cutting. The method for cleaning a silicon wafer after diamond wire cutting is carried out according to the following steps: 1. a step of cleaning the silicon wafer cut by a diamond wire in a citric acid aqueous solution; 2. a step of cleaning the silicon wafer in an alkaline cleaner; and 3. a step of cleaning the silicon wafer in hydrogen peroxide. A weak acid activation process is added before alkaline cleaning, so that metal ions remaining on the surface of the silicon wafer are less, a hydrogen peroxide cleaning process is added after alkaline cleaning to remove surface residual alkaline liquor, organic matter and metal ions, and at the same time, a surface damaged layer is better removed. The coverage rate of pyramid suede of the silicon wafer is relatively high in a subsequent battery etching process, and the suede is relatively uniform.

Description

technical field [0001] The invention relates to the field of cleaning silicon wafers, in particular to the field of silicon wafers after diamond wire cutting. Background technique [0002] At present, the silicon wafers after diamond wire cutting are generally cleaned directly by alkaline cleaning agents, so that the residual metal ions, organic matter, and alkaline cleaning solutions on the surface of the silicon wafers cannot be eradicated, and the silicon wafers will be used in the subsequent battery alkaline washing and texturing process. , often appear uneven surface texture, showing mottled phenomenon. Contents of the invention [0003] The technical problem to be solved by the present invention is: how to avoid the problem of non-uniform texturing on the surface of the silicon wafer in the subsequent battery alkaline washing texturing process due to the failure to clean the silicon wafer after diamond wire cutting. [0004] The technical solution adopted in the pre...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/02052
Inventor 刘宝华任崇荣谷燕铂李东东王立明任欢欢梁玲赵强王莹
Owner SHANXI LUAN PHOTOVOLTAICS TECH
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