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Transparent flexible oxide ferroelectric memory

A ferroelectric memory and oxide technology, applied in the direction of electric solid devices, circuits, electrical components, etc., can solve the problems of low temperature resistance, limited application, easy polarization fatigue, etc., achieve excellent high temperature resistance and overcome poor bonding , good light transmittance effect

Active Publication Date: 2017-09-29
NANJING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, organic ferroelectric thin films such as PVDF and P(VDF-TrFE) are widely used in the field of fully transparent or flexible ferroelectric memories due to their advantages of flexibility, high spontaneous polarization, strong polarization stability, and short polarization switching time. However, its poor bonding with the substrate, slow reading speed, easy polarization fatigue and low temperature resistance severely limit its application in transparent flexible ferroelectric memory.

Method used

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Embodiment 1

[0029] A transparent flexible oxide ferroelectric memory of the present invention is composed of a mica substrate, a doped ZnO transparent electrode, an oxide ferroelectric thin film and an ITO transparent electrode connected in sequence. Preferably, the substrate is 0.1 μm thick fluorophlogite (AlF 2 o 10 Si 33 Mg), doped ZnO transparent electrode is 2wt%Al 2 o 3 Doped ZnO thin film, oxide ferroelectric thin film is Bi 3.25 La 0.75 Ti 3 o 12 Thin film, ITO transparent electrode is mass ratio In 2 o 3 :SnO 2 = 9:1 ITO thin film. The light transmittance measurement results of the ferroelectric memory are shown in Table 2. When the frequency is 1KHz and the electric field is 400kV / cm, the saturation polarization (Ps) of the ferroelectric memory in the flat and bent states (r=1.4mm) is as follows: figure 2 shown. When the frequency is 1KHz and the electric field is 400kV / cm, the remanent polarization (Pr) of the ferroelectric memory in the flat and bent states (r=1....

Embodiment 2

[0031] A transparent flexible oxide ferroelectric memory of the present invention is composed of a mica substrate, a doped ZnO transparent electrode, an oxide ferroelectric thin film and an ITO transparent electrode connected in sequence. Preferably, the substrate is 0.1 μm thick fluorophlogite (AlF 2 o 10 Si 33 Mg), doped ZnO transparent electrode is 5wt% Ga 2 o 5 Doped ZnO thin film, oxide ferroelectric thin film is Bi 3.25 La 0.75 Ti 3 o 12 Thin film, ITO transparent electrode is mass ratio In 2 o 3 :SnO 2 = 9:1 ITO thin film. The light transmittance measurement results of the ferroelectric memory are shown in Table 2. When the frequency is 1KHz and the electric field is 400kV / cm, the saturation polarization (Ps) of the ferroelectric memory in the flat and bent states (r=1.4mm) is as follows: figure 2 shown. When the frequency is 1KHz and the electric field is 400kV / cm, the remanent polarization (Pr) of the ferroelectric memory in the flat and bent states (r=1...

Embodiment 3

[0033] A transparent flexible oxide ferroelectric memory of the present invention is composed of a mica substrate, a doped ZnO transparent electrode, an oxide ferroelectric thin film and an ITO transparent electrode connected in sequence. Preferably, the substrate is 1 μm thick fluorophlogite (AlF 2 o 10 Si 33 Mg), doped ZnO transparent electrode is 2wt% Al 2 o 3 Doped ZnO thin film, oxide ferroelectric thin film is Bi 3.25 La 0.75 Ti 3 o 12 Thin film, ITO transparent electrode is mass ratio In 2 o 3 :SnO 2 = 9:1 ITO thin film. The light transmittance measurement results of the ferroelectric memory are shown in Table 2. When the frequency is 1KHz and the electric field is 400kV / cm, the saturation polarization (Ps) of the ferroelectric memory in the flat and bent states (r=1.4mm) is as follows: figure 2 shown. When the frequency is 1KHz and the electric field is 400kV / cm, the remanent polarization (Pr) of the ferroelectric memory in the flat and bent states (r=1.4...

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Abstract

The invention discloses a transparent flexible oxide ferroelectric memory. The transparent flexible oxide ferroelectric memory consists of a mica substrate, a ZnO-doped transparent electrode, an oxide ferroelectric film and an ITO transparent electrode which are connected in sequence. According to the ferroelectric memory disclosed by the invention, the stratified perovskite oxide ferroelectric film serves as a ferroelectric functional layer; the light-admitting quality of the ferroelectric memory is high, and the light transmittance of visual light with the wavelength of over 400 nm is more than 80%; the ferroelectric memory is flexible and resistant to bending, and when the bending radius is 1.4 mm, the saturated polarization intensity and remaining polarization intensity approach to numeral values in a smooth state; the high temperature resistance is high, and after 450-degree annealing, the saturated polarization intensity and remaining polarization intensity are free of obvious change; and the transparent flexible oxide ferroelectric memory has wide application prospects.

Description

technical field [0001] The invention belongs to the field of nonvolatile ferroelectric memory, in particular to a transparent flexible oxide ferroelectric memory. Background technique [0002] With the continuous shrinking of the size of electronic devices and the continuous improvement of integration, the traditional flash memory can no longer meet people's needs, so some new types of memory have emerged, such as ferroelectric memory, resistive change memory, magnetic memory and phase change memory. Wait. Ferroelectric memory is recognized as the next generation of the most advanced technology due to its outstanding advantages such as non-volatility, low power consumption, high read and write times, high access speed, high-density storage, radiation resistance, and compatibility with integrated circuit (IC) technology. One of the storage with potential. [0003] In recent years, flexible devices and wearable electronic products have gradually been favored by the market. T...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11502H01L27/28H10B53/00
CPCH10B53/00H10K19/00
Inventor 高焕苏留帅袁国亮
Owner NANJING UNIV OF SCI & TECH
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