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Equivalent analog circuit of HP memristor model

A technology of equivalent analog and analog circuits, applied in CAD circuit design, electrical digital data processing, CAD numerical modeling, etc.

Pending Publication Date: 2017-09-01
HUBEI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the present invention, HP memristor is replaced by a resistor in the electronic circuit to obtain a new type of memristor circuit. Since there is no actual HP memristor on the market, we design a model based on HP memristor Memristor equivalent analog circuit, in order to better study the performance of memristor, we use basic circuit modules to construct a memristor equivalent analog circuit with the same characteristics as the HP memristor model

Method used

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  • Equivalent analog circuit of HP memristor model
  • Equivalent analog circuit of HP memristor model
  • Equivalent analog circuit of HP memristor model

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Embodiment Construction

[0046] The following are specific embodiments of the present invention and in conjunction with the accompanying drawings, the technical solutions of the present invention are further described, but the present invention is not limited to these embodiments.

[0047]The circuit components involved in this program are as follows: We use OP262GS for the op amp, and ordinary resistors for the resistors, whose resistance value is R 2 =R 3 = 10kΩ, R 4 =35kΩ, the resistance value R of titanium dioxide memristor M on = 100Ω, R off =10kΩ; Capacitance C 1 =C 2 = 100 μF. At this time, the corresponding system parameters of the dimensionless equation are: ρ=100, k=1, α=β=1, K=4.5.

[0048] The main material of HP memristor is titanium dioxide, its physical model is attached figure 1 As shown in the figure on the left, where D is the total length of the titanium dioxide film, and w(t) is the width of the doped layer. attached figure 1 The picture on the right is the electrical symb...

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Abstract

The invention provides an equivalent analog circuit of an HP memristor model, belongs to the technical field of electrical and electronic engineering, and solves the technical problems of difficult acquisition, high cost and the like of an existing HP memristor model. The analog circuit comprises a resistor R1, a resistor Ron, a resistor R5, a resistor R6, a resistor R7, a resistor R8, a capacitor C3, a capacitor C2, an operational amplifier U2, an operational amplifier U3, an operational amplifier U4, an operational amplifier U5, an operational amplifier U8, a multiplier U7, a multiplier U9, a divider U6 and a comparator U2, wherein the resistor Ron is connected in parallel with the amplifier U3 and is connected in series with the multiplier U7 and an integrator; a proportional amplifier is connected in series with the integrator; the proportional amplifier is connected to the divider U6; the comparator U2 is connected to the multiplier U9; and the multiplier U7 is connected with the multiplier U9. The analog circuit has the advantages of simple structure, low cost and the like.

Description

technical field [0001] The invention belongs to the technical field of electronics and electric engineering, and relates to an equivalent analog circuit of a HP memristive model. Background technique [0002] Memristor, full name memory resistance (Memristor). It is a circuit device that represents the relationship between magnetic flux and charge. Memristor has the dimension of resistance, but unlike resistance, the resistance value of memristor is determined by the charge flowing through it. Therefore, by measuring the resistance value of the memristor, the amount of charge flowing through it can be known, thereby having the effect of memorizing charge. In 2008, researchers at Hewlett-Packard made nanometer memristive devices for the first time, setting off a wave of memristive research. The emergence of nanometer memristive devices is expected to realize non-volatile random access memory. Moreover, the integration, power consumption, and read / write speed of memristor-...

Claims

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Application Information

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IPC IPC(8): G06F17/50
CPCG06F30/36G06F2111/10
Inventor 刘娣周国鹏
Owner HUBEI UNIV OF SCI & TECH
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