Memory system, memory module and control method thereof

Abstract

The embodiment of the invention provides a memory system, a memory module and a control method thereof. The memory system includes a memory controller and a memory module. The memory controller is arranged for generating a first clock signal and an inverted first clock signal. The memory module is coupled to the memory controller, at least receives the first clock signal and the inverted first clock signal from the memory controller, and includes a first terminal module, the first clock signal is coupled to the inverted first clock signal via the first terminal module. The invention can improve signal integrity.

Description

【Technical field】 [0001] The invention relates to the field of memory control, in particular to a memory system, a memory module and a method for controlling the memory module. 【Background technique】 [0002] A traditional dynamic random access memory (Dynamic Random Access Memory, DRAM) module usually includes a termination resistor (on-die termination), and the termination resistor is used for impedance matching of signal lines and reduces signal distortion. Conventional termination resistors are usually coupled to a reference voltage, such as ground. However, such a design cannot optimize signal quality. 【Content of invention】 [0003] The invention provides a memory system, a memory module and a control method of the memory module. Improves signal integrity. [0004] A memory system provided by the present invention may include: a memory controller, configured to generate at least a first clock signal and an inverted first clock signal; and a memory module, coupled ...

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Problems solved by technology

However, such a design cannot optimize the signal quality

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