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Active layer, thin-film transistor array substrate comprising the same, and display device comprising the same

A technology of thin film transistors and array substrates, applied in the field of display devices, can solve the problems of high cost of polysilicon and low on/off ratio, etc.

Active Publication Date: 2017-08-11
LG DISPLAY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

polysilicon with approximately 100cm 2 / Vs high electron mobility, but has a lower on / off ratio compared with oxide semiconductors, and the application of polysilicon in large-area electronic devices is costly

Method used

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  • Active layer, thin-film transistor array substrate comprising the same, and display device comprising the same
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  • Active layer, thin-film transistor array substrate comprising the same, and display device comprising the same

Examples

Experimental program
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Embodiment 1

[0092] as above figure 2 As shown, a thin film transistor is fabricated by forming an active layer including a semiconductor material portion and a carbon allotrope portion in a bottom gate type thin film transistor. The semiconductor material portion is made of IGZO (ie, Indium Gallium Zinc Oxide). The optical image of the TFT is shown in Figure 11 ,From Figure 11 It can be clearly seen that a thin film transistor comprising a semiconductor material portion and a carbon allotrope portion was fabricated.

Embodiment 2

[0102] as above Figure 4 As shown, a thin film transistor is fabricated by forming an active layer including a semiconductor material portion and a carbon allotrope portion in a bottom gate type thin film transistor. Semiconductor material components are made of IGZO.

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PUM

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Abstract

Carbon allotropes, a thin-film transistor array substrate comprising the same, and a display device comprising the same are disclosed. The thin-film transistor array substrate comprising a substrate, a gate electrode on the substrate, a gate insulating film on the gate electrode, an active layer positioned on the gate insulating film and comprising a semiconductor material and a plurality of carbon allotropes, and a source electrode and a drain electrode that make contact with the active layer.

Description

technical field [0001] The present disclosure relates to a display device, and more particularly, to an active layer, a thin film transistor array substrate including the active layer, and a display device. Although the present disclosure is applicable to a wide range of applications, it is particularly suitable for improving the device characteristics of display devices by implementing an active layer comprising a carbon allotrope. Background technique [0002] With the development of multimedia, flat panel displays (FDP) are becoming more and more important nowadays. Along with this, various flat panel displays such as liquid crystal displays (LCDs), plasma display panels (PDPs), field emission displays (FEDs), organic light emitting displays (OLEDs), etc. are being put into practical use. [0003] The display device is addressed using a passive matrix addressing scheme or an active matrix addressing scheme using thin film transistors. In a passive matrix addressing sche...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12H01L29/12H01L29/786
CPCH01L27/1222H01L29/12H01L29/786H10K59/873H01L29/78618H01L29/78684H01L29/7869H01L29/78696H01L29/267H10K59/1213H10K10/484H10K10/486H10K50/844H10K59/131H10K85/221G02F1/1368G02F2201/121G02F2201/123G02F2202/10
Inventor 姜知延金昌垠白贞恩金成真
Owner LG DISPLAY CO LTD
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