Film forming device, film forming method and film forming source

Abstract

The invention discloses a film forming device, method and source. The film forming device comprises a film forming chamber and the film forming source. The film forming source comprises a heating crucible, at least two buffering pieces and driving pieces. The heating crucible comprises a crucible body used for containing a film forming material and a heating piece used for heating the film forming material in the crucible body. Each buffering piece comprises a constant temperature container, a lower valve located at the bottom of the constant temperature container, an upper valve and an air outlet located in the top of the constant temperature container, and a pressure sensor used for detecting the air pressure of the constant temperature container. According to the film forming device, when the film thickness is controlled, the corresponding relation between the specific material vapor pressure and the temperature does not need to be known, and only the simple relation between the pressure of the constant temperature containers and the film thickness needs to be known, so that the working difficulty is simplified, the production efficiency is improved, and the yield is increased.

Description

technical field [0001] The invention relates to a film forming device, a film forming method and a film forming source. Background technique [0002] Today, with the rapid development of science and technology, thin-film devices are used in various fields. Precisely controlling the thickness and uniformity of thin-film devices is an important indicator that determines the precision of thin-film devices. Therefore, more requirements are put forward for the precision of film-forming equipment. high demands. [0003] There are several traditional film-forming methods: sputtering, ion plating, molecular beam epitaxy, spin-coating, etc. Among them, vacuum evaporation is the most common method for making thin films. This vacuum evaporation method is to evacuate the vacuum chamber containing the substrate to make the gas pressure reach 10 -4 Below Pa, then heat the plating material to make atoms or molecules vaporize and escape from the surface to form a vapor flow, which is inci...

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Problems solved by technology

[0009] In order to solve the above-mentioned deficiencies in the prior art, the technical problem to be solved by the present invention is to provide a film forming device to solve the problems of waste of plating material, difficulty in controlling the rate, and uneven film forming in the actual production of traditional film forming devices. ; Especially to solve the problem that the rate of sublimation material with unstable evaporation rate cannot be controlled when forming a film; when the film forming device controls the film thickness, it is not necessary to know the corresponding relationship between the specific material vapor pressure and temperature, only need Understand the simple relationship between the pressure of the constant temperature container and the film thickness, simplify the work difficulty, improve production efficiency and yield

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