Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Research method silicon substrate surface morphology based on laser control nanostructure

A nanostructure and surface morphology technology, applied in the process of producing decorative surface effects, manufacturing microstructure devices, nanotechnology, etc., can solve the problem of affecting surface morphology, distortion of silicon-based surface morphology, and unsatisfactory silicon-based surface morphology and other problems, to achieve the effect of short time and high efficiency

Active Publication Date: 2017-05-31
芜湖数字信息产业园有限公司
View PDF13 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The defect of this technology is that the surface morphology of the silicon substrate etched for the first time will affect the surface morphology of the second etching, and the surface morphology of the silicon substrate etched for the second time will be distorted. Such a silicon substrate surface morphology is obviously not very good. ideal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Research method silicon substrate surface morphology based on laser control nanostructure
  • Research method silicon substrate surface morphology based on laser control nanostructure
  • Research method silicon substrate surface morphology based on laser control nanostructure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Use asbestos (thermal insulation material) to touch the right plane of the nanostructure silicon substrate, the thermal conductivity of asbestos k 1 =0W / m-K. Then adjust the power of the laser to P=75mW, and irradiate the surface of the silicon-based material for 10 seconds. After laser irradiation, the silicon substrate was placed under an optical magnifying instrument for observation. The result of observation is that there is a raised silicon-based surface morphology in the center of the silicon substrate, and the corresponding height H=900nm and maximum diameter D=5.15um are measured, and the corresponding aspect ratio is 0.175, as shown in Figure 1A.

Embodiment 2

[0038] Use silicon (the same material) to contact the right plane of the nanostructured silicon substrate, the thermal conductivity of silicon k 2 = 150W / m-K. Repeating the above operations, the corresponding height H=900nm and the largest diameter D=6.00um were measured, and the corresponding aspect ratio was 0.150, as shown in FIG. 1B .

Embodiment 3

[0040] Use aluminum (thermal conductive material) to contact the right plane of the nanostructure silicon substrate, the thermal conductivity of aluminum k 3 = 200W / m-K. Repeat the above operations to measure the corresponding height H=900nm and maximum diameter D=6.85um, and the corresponding aspect ratio is 0.131, as shown in Figure 1C.

[0041] It can be seen from the above examples that when the thermal conductivity of the contact material gradually increases (the thermal conductivity of asbestos is the lowest, the thermal conductivity of silicon is medium, and the thermal conductivity of aluminum is the highest), the maximum height of the silicon-based surface morphology will not change. The maximum diameter D becomes larger and larger. According to the aspect ratio of the maximum height H / maximum diameter D, it can be obtained that the aspect ratio of the silicon-based surface morphology is getting smaller and smaller.

[0042] The above is to study the aspect ratio of...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
heightaaaaaaaaaa
aspect ratioaaaaaaaaaa
aspect ratioaaaaaaaaaa
Login to View More

Abstract

The invention discloses a research method silicon substrate surface morphology based on a laser control nanostructure. The method comprises the following steps: 1, separately contacting a silicon substrate of a nanostructure by using materials with different thermal conductivities; 2, irradiating the surface of the silicon substrate of the silicon substrate via laser; 3, observing the surface morphology of the silicon substrate, and measuring a draw ratio of a projection on the surface of the silicon substrate; and 4, summarizing the change rule of the surface morphology of the silicon substrate. The research method disclosed by the invention has the following features: firstly, the surface morphology of the silicon substrate of the nanostructure is changed by the thermal conductivity of the contact material; secondly, the silicon substrate of the nanostructure is irradiated by the laser, thereby being clean and environmentally friendly, and generating no pollution; and thirdly, the time necessary for changing the surface morphology of the silicon substrate of the nanostructure is short, and the efficiency is high.

Description

technical field [0001] The invention belongs to the technical field of nanostructure research, and in particular relates to a research method for controlling the surface morphology of nanostructured silicon substrates based on laser. Background technique [0002] Nanostructured silicon-based materials are new materials developed on the basis of silicon materials, and are playing an increasingly important role in the field of MEMS (micro-electromechanical systems). With the continuous development and improvement of MEMS (micro-electromechanical systems), the silicon-based surface morphology required on these micro-devices has become more and more complex and diverse. [0003] At present, it has been possible to form silicon-based surface morphology on nanostructured silicon-based materials, but this technology is not yet mature, mainly in how to control the silicon-based surface morphology. For changing the silicon-based surface morphology on nanostructured silicon-based mat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00B82Y40/00
CPCB81C1/00444B82Y40/00
Inventor 张俐楠程从秀郑伟吴立群王洪成
Owner 芜湖数字信息产业园有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com