Light emitting element

Abstract

Disclosed is a light emitting element. The light emitting element comprises: a first conductive type semiconductor layer; a mesa that includes an active layer and a second conductive type semiconductor layer; a current blocking layer; a transparent electrode at least partially covering the current blocking layer; a first electrode that includes a first electrode pad and a first electrode extension; a second electrode that includes a second electrode pad and a second electrode extension; and an insulation layer partially located on the lower portion of the first electrode, wherein the mesa includes at least one groove formed on a side thereof, the first conductive type semiconductor layer is partially exposed through the groove, the insulation layer includes an opening through which the exposed first conductive type semiconductor layer is at least partially exposed, the first electrode extension includes one or more extension contact portions that are brought into contact with the first conductive type semiconductor layer through an opening, and the second electrode extension includes an end that has a width different from the average width of the second electrode extension.

Description

technical field [0001] Exemplary embodiments of the present disclosure relate to a light emitting device, and more particularly, to a light emitting device having high current spreading efficiency to provide good properties in terms of luminous efficiency and reliability. Background technique [0002] In general, a light emitting device such as a light emitting diode includes an n-type semiconductor layer that supplies electrons, a p-type semiconductor layer that supplies holes, and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer. N-type and p-type electrodes are respectively formed on the n-type semiconductor layer and the p-type semiconductor layer to receive electric power from an external power source. [0003] On the other hand, a p-type semiconductor layer based on a nitride semiconductor has lower conductivity than an n-type semiconductor layer. Therefore, current does not diffuse efficiently in the p-type semicond...

AI Technical Summary

Problems solved by technology

Therefore, current does not diffuse efficiently in the p-type semiconductor layer, thereby causing current crowding in a certain region of the semiconductor layer

When current crowding occurs in the semiconductor layer, LEDs become susceptible to electrostatic discharge and can suffer from leakage and reduced efficiency

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