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Quantum dot light-emitting device and display device and lighting device with same

A technology of electroluminescent devices and quantum dots, which is applied in the direction of lighting devices, fixed lighting devices, semiconductor devices of light-emitting elements, etc., can solve the problems of unbalanced injection of electrons and holes, low luminous efficiency, etc., and achieve improved luminous efficiency and The effect of service life

Active Publication Date: 2017-05-10
NANJING TECH CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The main purpose of the present invention is to provide a quantum dot electroluminescent device, a display device and a lighting device having it, so as to solve the problem of low luminous efficiency caused by unbalanced injection of electrons and holes in the prior art

Method used

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  • Quantum dot light-emitting device and display device and lighting device with same

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Embodiment 1

[0042] Quantum dot electroluminescent device, including cathode 10 and anode 50, and two layers of electron transport layers, quantum dot luminescent layer 30 and hole transport layer 40 arranged in sequence from cathode 10 to anode 50, wherein, cathode 10 is an Ag electrode, the second One layer of electron transport layer 1 has a particle size of 1 nm and an electron mobility of 3.5×10 -4 cm 2 v -1 the s -1 Zinc oxide nanocrystals, the second electron transport layer 2 has an electron mobility of 1×10 -5 cm 2 v -1 the s -1 Tris (8-hydroxyquinoline) aluminum (abbreviated as Alq3) electron transport material. The quantum dot luminescent layer 30 is CdSe / ZnS red core-shell quantum dots, the wavelength range of its absorption spectrum is 300-610nm, and the hole transport layer 40 is poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid PEDOT : PSS and poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), the anode 50 is indium tin oxide (ITO).

Embodiment 2

[0044] Quantum dot electroluminescent device, including cathode 10 and anode 50, and two layers of electron transport layers, quantum dot luminescent layer 30 and hole transport layer 40 arranged in sequence from cathode 10 to anode 50, wherein, cathode 10 is an Ag electrode, the second The material of one layer of electron transport layer 1 has a particle size of 3nm and an electron mobility of 1.5×10 -3 cm 2 v -1 the s -1 The PbTe electron transport material equipped with ethanolamine ligands, the second electron transport layer 2 is indium oxide nanocrystals with a particle size of 10nm and with ethanolamine surface ligands, and its electron mobility is 0.9×10 -3 cm 2 v -1 the s -1 . The quantum dot luminescent layer 30 is CdSe / ZnS red core-shell quantum dots, the wavelength range of its absorption spectrum is 300-610nm, and the hole transport layer 40 is poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid PEDOT : PSS and poly(N,N'-bis(4-butylphenyl)-N,N'-bis(p...

Embodiment 3

[0046] Quantum dot electroluminescent device, including cathode 10 and anode 50, and three layers of electron transport layer, quantum dot luminescent layer 30 and hole transport layer 40 arranged sequentially from cathode 10 to anode 50, wherein, cathode 10 is an Ag electrode, the second One layer of electron transport layer 1 has a particle size of 3nm with ethanolamine surface ligands, and the electron mobility is 0.8×10 -3 cm 2 v-1 the s -1 Zinc oxide nanocrystals, the material of the second electron transport layer 2 has a particle size of 5nm, and an electron mobility of 6.2×10 -4 cm 2 v -1 the s -1 SiTAZ electron transport material, the material of the third electron transport layer 3 has a particle size of 10nm and an electron mobility of 8×10 -5 cm 2 v -1 the s -1 TPBi electron transport material. The quantum dot luminescent layer 30 is CdSe / ZnS red core-shell quantum dots, the wavelength range of its absorption spectrum is 300-610nm, and the hole transport l...

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Abstract

The invention provides a quantum dot light-emitting device and a display device and lighting device with the same. The quantum dot light-emitting device comprises a negative electrode, a first electron transmission layer to an n(th) electron transmission layer, a quantum dot light-emitting layer and a positive electrode which are sequentially arranged, wherein n is an integer and is more than or equal to 2 but less than or equal to 6, and in the first electron transmission layer to the n(th) electron transmission layer, the electron mobility rate of at least one layer in a second electron transmission layer to the n(th) electron transmission layer is smaller than the electron mobility rate of the first electron transmission layer. The electron mobility capability of the whole transmission layer material is reduced, thus, the electron mobility rate is reduced from the overall, the electron injection rate and the hole injection rate approximate to be relatively consistent, the luminous efficiency of the light-emitting device is improved, and the service lifetime of the light-emitting device is prolonged.

Description

technical field [0001] The invention relates to the field of light emitting devices, in particular to a quantum dot electroluminescence device, a display device and an illumination device having the same. Background technique [0002] Quantum dot light-emitting diode (QLED) is a device that directly excites quantum dots to emit light. The working principle of QLED is very close to that of organic light-emitting diodes (OLEDs). The external circuit injects electrons and holes into the device through the positive and negative electrodes respectively. The injected carriers generally arrive through the carrier injection layer and the transport layer. The light-emitting layer composite emits light. The difference is that the light-emitting layer in OLED mainly uses organic molecules with a conjugated structure, while the light-emitting layer in QLED uses inorganic quantum dot materials. Compared with conjugated organic molecular materials, inorganic quantum dots have stronger c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50G09G3/3208F21S8/00F21Y115/10
CPCF21S8/00H10K50/115H10K50/16
Inventor 甄常刮陈超
Owner NANJING TECH CORP LTD
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