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Method for reducing nucleus density in procedures for synthesizing single-crystal graphene by aid of chemical vapor deposition processes

A technology of chemical vapor deposition and single crystal graphene, which is applied in chemical instruments and methods, from chemically reactive gases, single crystal growth, etc., can solve problems such as poor operability, lack of in-depth essential mechanism, and low efficiency

Inactive Publication Date: 2017-05-10
FUDAN UNIV
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Problems solved by technology

[0007] The existing hydrogen annealing treatment method needs a long time for annealing, and the efficiency is low; the existing method of changing the shape of the copper substrate is poor in operability, which is not conducive to large-scale growth; the existing argon annealing treatment method has high efficiency and low operability. Better, but no better insight into the underlying mechanism

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  • Method for reducing nucleus density in procedures for synthesizing single-crystal graphene by aid of chemical vapor deposition processes
  • Method for reducing nucleus density in procedures for synthesizing single-crystal graphene by aid of chemical vapor deposition processes
  • Method for reducing nucleus density in procedures for synthesizing single-crystal graphene by aid of chemical vapor deposition processes

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Embodiment Construction

[0029] The present invention will be further described below in conjunction with the accompanying drawings and embodiments, but the present invention is not limited to the scope of the described embodiments.

[0030] In the process of synthesizing single crystal graphene by chemical vapor deposition method, the following methods are used to reduce the crystal nucleus density:

[0031] (1) Pretreatment of metal copper substrate: put a rectangular copper sheet with a thickness of 25 μm in a phosphoric acid solution (H 3 PO 4 :H 2 O = 3:1) for electrochemical polishing, then washed 5 times with deionized water, and blown dry with a nitrogen gun; then use a clean glass rod, with the help of tweezers, roll the copper sheet along the width direction into openings at both ends A barrel shape, and the growth result of the inner surface of the barrel-shaped copper substrate is used as the research object;

[0032] (2) Annealing of metal copper substrate: In chemical vapor deposition...

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Abstract

The invention belongs to the field of technologies for synthesizing graphene, and particularly discloses a method for reducing the nucleus density in procedures for synthesizing single-crystal graphene by the aid of chemical vapor deposition processes. The nucleus density is an important factor for determining the sizes of single crystals in procedures for industrially synthesizing the large graphene single crystals, and the large single crystals can be increasingly advantageously obtained along with decrease of the nucleus density. High-temperature annealing treatment is carried out on metal growth substrates for the graphene in oxygen or hydrogen atmosphere under controlled pressures, evolution of the contents of carbon on the surfaces of metal and inside the metal is jointly computed and simulated, annealing conditions are optimized, and metal substrates which are suitable for industrial standard production and have low nucleation density can be ultimately obtained.

Description

technical field [0001] The invention belongs to the technical field of graphene synthesis, in particular to a method for synthesizing two-dimensional graphene materials by chemical vapor deposition. Background technique [0002] In recent years, the research boom of graphene has reached an unprecedented height, and its excellent electrical and optical properties have brought many potential applications. One of the most important problems is to obtain large-scale graphene samples. Compared with large-area graphene polycrystalline films, large-size single-crystal graphene has better performance. The prerequisite for obtaining large-sized single crystals is to effectively control the crystal nucleus density. [0003] The current CVD graphene nuclei density control methods include the following: [0004] (1) Annealing the electrochemically polished copper substrate under a long-term high-pressure hydrogen atmosphere to reduce the roughness of the copper surface and remove pol...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/02C30B25/18C30B29/02
CPCC30B25/02C30B25/186C30B29/02
Inventor 孙正宗刘冰
Owner FUDAN UNIV
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