Assembling auxiliary device for large-scale vertical HVPE reaction chamber

Abstract

The invention relates to an assembling auxiliary device for a large-scale vertical HVPE reaction chamber. The assembling auxiliary device is composed of a top flange, a hoisting load-bearing pillar and a precision adjusting bearing plate. Two ends of the hoisting load-bearing pillar are both equipped with a limit moving structure capable of adjusting upper and lower motion range. The load-bearing ratio of weight of the large-scale vertical HVPE reaction chamber on a load-bearing pipe to weight of the large-scale vertical HVPE reaction chamber on an outer sleeve can be adjusted after general assembling of the large-scale vertical HVPE reaction chamber. The precision adjusting bearing plate can bear and accurately adjust concentricity and levelness of parts. For assembling of the large-scale vertical HVPE reaction chamber, two big areas A and B are divided for separate assembly by the assembling auxiliary device, and then overall assembling is carried out. Therefore, the problem of assembling inconvenience caused by too high height of the reaction chamber can be effectively solved, assembling precision and assembling efficiency are obviously enhanced, and the influence on precision of superfluous dismounting of the upper body and equipment stability is avoided during maintenance and dismounting.

Description

technical field [0001] The invention relates to an assembly auxiliary device for semiconductor material growth equipment, more specifically, to an assembly auxiliary device for a large vertical HVPE reaction chamber. Background technique [0002] With breakthroughs in technology research and development, the application of GaN in various fields such as LEDs, power devices, solar energy, and integrated circuits has developed rapidly, and the hydride vapor phase epitaxy (HVPE) technology is the current stage that can quickly and high-quality prepare GaN substrates. The effective method of controlling the structure of the HVPE reaction chamber and improving the accuracy and speed of assembly can further improve the process stability and efficiency of GaN substrate preparation. [0003] HVPE reaction chambers are generally divided into two categories: vertical type and horizontal type, and vertical HVPE reaction chambers are usually multi-layer stacked structures. With 11 piece...

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Problems solved by technology

[0003] HVPE reaction chambers are generally divided into two types: vertical type and horizontal type, and vertical HVPE reaction chambers are usually multi-layer stacked structures. With 11 pieces or even 21 pieces, the overall height will increase accordingly, the number of parts will increase accordingly, and the structure of the parts will be more complex, resulting in a great increase in the control of assembly accuracy and the difficulty of assembly

[0004] The core component of the vertical HVPE reaction chamber is located in the upper part of its overall assembly, which has the characteristics of high positioning accuracy, usually not easy to wear out, and does not need to be disassembled. Every time the consumable parts are replaced, it is necessary to repeatedly disassemble and assemble the unworn parts on the upper part, which not only increases the workload of disassembly and assembly, but also makes it difficult to control the assembly accuracy of the HVPE reaction chamber and even the stability of the equipment

[0005] Furthermore, most of the assembly parts of the HVPE reaction chamber are made of quartz material, which is fragile and fragile. Repeated disassembly and assembly will inevitably accelerate its wear and tear, which will affect the service life of the parts.

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