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Single crystal furnace for rapid crystal growth through chemical heat sink enhanced cooling technology

A technology of chemical heat sink and single crystal furnace, applied in crystal growth, single crystal growth, chemical instruments and methods, etc.

Active Publication Date: 2019-04-12
徐州晶睿半导体装备科技有限公司
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a single crystal furnace that realizes rapid crystal growth through chemical heat sink enhanced cooling technology, so as to solve the heat dissipation problem that it is difficult to quickly remove a large amount of latent heat of crystallization under the condition of high pulling speed of the crystal by adopting the traditional air cooling method

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  • Single crystal furnace for rapid crystal growth through chemical heat sink enhanced cooling technology
  • Single crystal furnace for rapid crystal growth through chemical heat sink enhanced cooling technology
  • Single crystal furnace for rapid crystal growth through chemical heat sink enhanced cooling technology

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Embodiment Construction

[0028] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0029] Such as Figure 1-4 As shown, the single crystal furnace that achieves rapid crystal growth through chemical heat sink enhanced cooling technology mainly involves the reaction device 5 that transports reactants and performs chemical endothermic reaction inside it. The reaction device 5 is composed of two tapered parts, the combined parts are a frusto-conical hollow graphite cylinder 7 and a reaction cylinder 8 providing a chemical reaction place. A reaction cylinder 8 is placed inside the graphite cylinder 7, which can stabilize the gas flow near the crystal. The taper of the graphite cylinder 7 is 0°-60°, the distance between the lower end surface and the crystal 2 is 10-40mm, and the distance between the lower end surface and the melt 4 is 10-40mm. The reaction tube 8 is surrounded by a hollow spiral coil 9, and its two ends protrude out of the fur...

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Abstract

The invention discloses a single crystal furnace for achieving rapid crystal growth through a chemical heat sink enhanced cooling technology and mainly relates to a reaction device capable of conveying reactants and carrying out a chemical endothermic reaction inside the device. The reaction device is composed of a graphite cylinder and a reaction cylinder, wherein the reaction cylinder is made of an inert material; the reactants are introduced from an inlet, the chemical endothermic reaction is carried out in the reaction cylinder at a high temperature, the temperature on the surface of the reaction device and in a nearby argon gas area thereof is reduced, heat on the crystal surface is rapidly transferred, and incompletely reacted reactants and the reaction product are discharged out of the furnace by an outlet. The single crystal furnace is reasonable in structural design, the reactants can react in the reaction device, and impurities can be prevented from being introduced into the furnace in the reaction process. According to the device disclosed by the invention, the growing crystal is subjected to enhanced cooling by virtue of the chemical endothermic reaction, the heat on the crystal surface is rapidly transferred, and the axial temperature gradient inside the crystal is obviously improved, so that the crystal growth speed is improved, and the aim of reducing the crystal preparation cost is achieved.

Description

Technical field: [0001] The invention belongs to the field of Czochralski method single crystal growth devices, and in particular relates to a single crystal furnace capable of realizing rapid crystal growth through chemical heat sink enhanced cooling technology. Background technique: [0002] The Czochralski method is one of the main techniques for single crystal growth. Taking crystalline silicon as an example, it is the electronic information basic material of semiconductor devices such as artificial intelligence, automatic control, information processing, and photoelectric conversion, and it also has a huge market in the photovoltaic industry. The conversion efficiency of monocrystalline silicon cells is 5% higher than that of traditional polycrystalline silicon cells, but the production cost of monocrystalline silicon is relatively high. Therefore, on the premise of ensuring crystal quality, improving production efficiency and reducing energy consumption has become a b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/00
CPCC30B15/00
Inventor 刘立军丁俊岭赵文翰
Owner 徐州晶睿半导体装备科技有限公司
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