A non-destructive method for obtaining flexible ferroelectric film capacitors

Abstract

The invention discloses a method of acquiring a flexible ferroelectric thin film capacitor nondestructively, which belongs to the technical field of ferroelectric devices and semiconductors. A ferroelectric thin film capacitor with an inorganic substrate and with flexibility is acquired in a convenient and economical method; a common material such as emery, industrial wax, a glass sheet and a glass plate is used as a substrate grinding tool, a heating platform is used for melting the industrial wax and bonding the glass sheet and the PZT, the emery is then used for thinning the rigid PZT device with the substrate thickness about 500 [mu]m to be 100 [mu]m, a flexible PZT is acquired, and a small amount of chemical reagent is then used for removing the residual industrial wax attached to the surface of the device. The method of the invention is simple in principle, low in cost, safe and reliable in operation; compared with other methods, the method of the invention can acquire the flexible ferroelectric thin film capacitor more quickly and more safely, the excellent electrical properties are not lost, the flexible device can keep excellent electrical properties under a repeated force condition, and the reliability is excellent.

Description

technical field [0001] The invention relates to the field of ferroelectric thin film devices and semiconductor technology, is applicable to various ferroelectric thin film capacitors, and is mainly used to obtain ferroelectric thin film capacitors with flexible characteristics. Background technique [0002] With the development of semiconductor technology level, the development of flexible substrate devices based on ferroelectric materials has received more and more attention. Its good physical and chemical properties make flexible substrate devices have very broad application prospects. Traditional silicon-based materials are mechanically brittle and difficult to withstand large deformations, so silicon-based material devices have their own limitations in flexible applications. [0003] In general, flexible devices are grown on organic substrates, and their electrical properties are far from ideal for devices grown on inorganic substrates. At the same time, considering tha...

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Problems solved by technology

Traditional silicon-based materials are mechanically brittle and difficult to withstand large deformations, so silicon-based material devices have their own limitations in flexible applications

[0003] In general, flexible devices are grown on organic substrates, and their electrical properties are far from ideal for devices grown on inorganic substrates.

At the same time, considering that the production of organic flexible substrate devices has high requirements on equipment and technology, it requires a lot of time and capital investment.

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