Anti-interference image sensor
An image sensor and photosensitive resin technology, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of inability to sense, limit the application range of sensors, etc., and achieve the effect of avoiding solder ball occlusion and preventing electromagnetic interference
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
no. 1 example
[0028] see figure 2 , an anti-interference image sensor 2, comprising:
[0029] A first substrate 21a, which may be a silicon substrate, on which electronic components (light receiving regions) are formed, the first substrate 21a includes a front surface having a first light receiving region 22a and a rear surface opposite to the front surface ;
[0030] A silicon substrate 31, the silicon substrate 31 comprising a front with a groove 25 and a back opposite to the front, the depth of the groove 25 is small, the thickness of the silicon substrate 31;
[0031] The second substrate 21b is arranged at the bottom of the groove 25, the second substrate 21b includes a front with a second light receiving area 22b and a back opposite to the front, the front of the second substrate 21b Coplanar with the back surface of the silicon substrate 31, the bottom of the groove 25 should be far away from the first light receiving region 22a;
[0032] The back side of the first substrate 21 a...
no. 2 example
[0042] see image 3 , an anti-interference image sensor 3, comprising:
[0043] A first substrate 21a, which may be a silicon substrate, on which electronic components (light receiving regions) are formed, the first substrate 21a includes a front surface having a first light receiving region 22a and a rear surface opposite to the front surface ;
[0044] A silicon substrate 31, the silicon substrate 31 comprising a front with a groove 25 and a back opposite to the front, the depth of the groove 25 is small, the thickness of the silicon substrate 31;
[0045] The second substrate 21b is arranged at the bottom of the groove 25, the second substrate 21b includes a front with a second light receiving area 22b and a back opposite to the front, the front of the second substrate 21b Coplanar with the back surface of the silicon substrate 31, the bottom of the groove 25 should be far away from the first light receiving region 22a;
[0046] The back side of the first substrate 21 a ...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com