Preparation device for single-crystal graphite material

A technology of graphite material and preparation device, which is applied in the directions of polycrystalline material growth, single crystal growth, crystal growth, etc., can solve the problems of deviation of graphite characteristics, affecting the physical and chemical morphology of graphite flake crystals, etc., and achieves increased use and simple method. efficient effect

Active Publication Date: 2017-01-04
WUXI DONGHENGNEWENERGYTECHNOLOGYCO LTD
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Both of the above two preparation methods affect the physical and chemical forms of graphite flake crystals, and the prepared graphite will have deviations in characteristics

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation device for single-crystal graphite material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The preferred technical solutions of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0023] As shown in the figure, a kind of single crystal graphite material preparation device of the present invention comprises reaction furnace 11, and described reaction furnace 11 is provided with multi-layer interlayer 12 for placing graphite sheet, and described interlayer 12 is fixed on reaction furnace 11. On the inner wall of the furnace 11, a plurality of wear plates 13 corresponding to the interlayer 12 are also arranged on the inner wall of the reaction furnace 11;

[0024] The wear plate 13 is fixed on the inner wall of the reaction furnace 11, the wear plate 13 is partly located above the interlayer 12, and the surface of the wear plate 13 facing the interlayer 12 has friction particles;

[0025] A resistance heater 14 is provided on the other side of the wearing plate 13;

[0026] The connecting wear plate 13 is pro...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation device for a single-crystal graphite material. The preparation device comprises a reactor, wherein multiple interlayers for arranging graphite sheets are arranged in the reactor and fixed on the inner wall of the reactor; multiple wear plates corresponding to the multiple interlayers are fixed on the inner wall of the reactor and partially located above the interlayers; friction particles are arranged on the side, facing the corresponding interlayer, of each wear plate, and a resistance heater is arranged on the other side of the wear plate; a vibration device is arranged and connected with all the wear plates; an internal blower device is arranged on the reactor. Compared with the prior art, the preparation device for the single-crystal graphite material is characterized in that the graphite sheets are heated at a high temperature firstly and then worn physically by the wear plates, single crystals separated at the high temperature on the surfaces of the graphite sheets are separated from the graphite sheets, and single graphite crystals are prepared.

Description

technical field [0001] The invention relates to a novel material manufacturing device, in particular to a single crystal graphite material manufacturing device, which belongs to the field of novel material preparation. Background technique [0002] In recent years, with the vigorous development of science and technology, the performance of electronic products has been continuously improved, and the size of electronic products has become smaller and smaller. With the improvement of the working speed and efficiency of electronic products, this also means that electronic products Therefore, electronic products not only need to be equipped with corresponding heat dissipation devices, but also ensure that the heat dissipation devices have excellent heat dissipation capabilities, so as to timely dissipate the heat generated by the electronic components inside the electronic products. This ensures the normal operation of electronic products, thereby improving the reliability of p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/02C30B1/00
CPCC30B1/00C30B29/02
Inventor 沈宇栋徐胜利冯祺
Owner WUXI DONGHENGNEWENERGYTECHNOLOGYCO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap