Laser etching method and device, substrate electrode and electroluminescent device

Abstract

The invention discloses a laser etching method and device, a substrate electrode and an electroluminescent device. The laser etching method comprises a step of etching an object to be etched by laser beams, wherein the object to be etched is provided with at least one region to be etched, and the laser beams include a main laser beam for gasifying a conducting material in the region to be etched and auxiliary laser beams for lowering the temperature falling rate in a space corresponding to the edge of the region to be etched. Two types of laser beams are adopted in the etching step: the main laser beam can gasify the conducting material in the region to be etched while the auxiliary laser beams are used for raising the temperature in the space corresponding to the edge of the region to be etched, so that the temperature falling rate in the space corresponding to the edge of the region to be etched is lowered, the gasified conducting material is prevented from being deposited due to over low temperature in the space corresponding to the edge of the region to be etched during outward diffusion of the gasified conducting material from the space corresponding to the region to be etched, and the formation of bumps on the surface of the object to be etched is avoided.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a laser etching method and device, a substrate electrode and an electroluminescence device. Background technique [0002] The basic principle of laser etching is to focus a low-power laser beam with high beam quality (usually ultraviolet laser, fiber laser) into a very small spot, and form a high power density at the focus, so that the material is vaporized and evaporated in an instant, forming Holes, slots, slots. [0003] Laser etching utilizes the superior processing performance of laser, such as non-contact processing, high degree of flexibility, fast processing speed, no noise, small heat-affected zone, and extremely small spot that can be focused to the laser wavelength level, and can obtain good dimensional accuracy And processing quality, especially the interaction with certain materials (such as polyimide) is a "cold processing" of "photochemical acti...

AI Technical Summary

Problems solved by technology

However, in the current laser etching process, the phenomenon of edge deposition often occurs, and the conductive material will be re-deposited on the edge of the area to be etched, forming a protrusion that is tens or even hundreds of nanometers higher than the original surface of the conductive material.

[0005] This kind of protrusion existing in the space corresponding to the edge of the area to be etched is likely to cause adverse effects on the performance of the device. In addition, during the preparation of thin-film devices, uneven film formation will be caused by edge protrusions; during the use of devices, a large amount of current will be gathered at the tip discharge, making the place The current density of the conductive material is higher than that of the flat part of the conductive material, which causes the phenomenon that the raised part of the edge is turned on before the internal area of ​​the device during the lighting process of the device

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