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Field emission negative electrode structure with current-limiting PN junctions

A field emission cathode and PN junction technology, which is applied in the direction of discharge tube/lamp parts, electrical components, circuits, etc., can solve problems such as consistency, and achieve the effects of prolonging life, avoiding burning, and improving overall emission capability

Inactive Publication Date: 2016-11-16
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is difficult to achieve the same field emission performance of each emitter at present, so it is necessary to limit the maximum current of each emission unit of the field emission array, avoid part of the emitter from being burned due to excessive load, and improve the uniformity and stability of field emission sex

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  • Field emission negative electrode structure with current-limiting PN junctions
  • Field emission negative electrode structure with current-limiting PN junctions

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Embodiment Construction

[0019] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0020] A field emission cathode structure with a current-limiting PN junction, comprising a substrate 1, a conductive layer 2 above the substrate 1, a P-type semiconductor layer 3 above the conductive layer, an N-type semiconductor layer 4 above the P-type semiconductor layer 3, The cathode emitter 5 above the N-type semiconductor layer 4, the P-type semiconductor layer and the N-type semiconductor layer form a PN junction, and the PN ...

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Abstract

The invention provides a field emission negative electrode structure with current-limiting PN junctions. The field emission negative electrode structure comprises a substrate, a conductive layer above the substrate, a P type semiconductor layer above the conductive layer, an N type semiconductor layer above the P type semiconductor layer and negative electrode emitters above the N type semiconductor layer, wherein a PN junction is formed by the P type semiconductor layer and the N type semiconductor layer; and the PN junction is in a reverse bias state when the negative electrode is in use. According to the field emission negative electrode structure, based on the characteristic that when the PN is under a certain reverse bias voltage, the flowing current barely changes along with the changes of the reverse bias voltage, one PN junction is connected below each emission unit in the filed emission array in series, so that the emission current of each unit is balanced; therefore, the stability and the uniformity of the emission current of the field emission negative electrode array are improved; the burnout of a part of the emitters caused by overhigh loads is avoided; the service life of the device is prolonged; and the general emission capability of the negative electrode is improved.

Description

technical field [0001] The invention belongs to the field of electron emission technology, in particular to field electron emission cold cathode technology. Background technique [0002] An ideal practical field electron emission cathode should have characteristics such as low threshold voltage, high current density, uniform and stable emission current, and these characteristics mainly depend on the cell structure, array density and emission of the field electron emission cathode. properties of bulk materials. In terms of unit structure, the electric field intensity at the tip of the emitter should be increased as much as possible while ensuring a low driving voltage and a stable emission current. [0003] However, due to various reasons, it is difficult to ensure that each field emission unit has the same emission capability, resulting in inconsistent emission currents provided by different emitters in the field emission array cathode (Field emission array, FEA). The tall...

Claims

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Application Information

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IPC IPC(8): H01J1/304H01J1/308
CPCH01J1/304H01J1/308
Inventor 祁康成李建樟王小菊王旭聪曹贵川
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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