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Repetition-frequency low-magnetic-field axial C-waveband high-power microwave device

A high-power microwave, low-magnetic field technology, used in klystrons, electron tubes with velocity/density modulation electron flow, etc., can solve problems such as breakdown of high-current electron beams in metal meshes, and achieve high conversion efficiency.

Active Publication Date: 2016-11-09
INST OF APPLIED ELECTRONICS CHINA ACAD OF ENG PHYSICS
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AI Technical Summary

Problems solved by technology

Among the various types of existing high-power microwave devices, the virtual cathode oscillator and the transit time oscillator use metal mesh to guide the electron beam to conduct, and the metal mesh is easily broken down by the high-current electron beam under heavy-frequency operation.

Method used

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  • Repetition-frequency low-magnetic-field axial C-waveband high-power microwave device

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Embodiment Construction

[0018] The technical solution of the present invention will be further described in detail below in conjunction with the accompanying drawings, but the protection scope of the present invention is not limited to the following description.

[0019] Such as figure 1 As shown, a repetitive-frequency low magnetic field axial C-band high-power microwave device includes an anode, a cathode 1, a guiding magnetic field generator 2, a slow-wave structure and a coaxial inner conductor 7, and the inside of the anode is provided with an emission area and the beam-wave interaction area, the beam-wave interaction area is a coaxial structure, and the microwave is output from the coaxial waveguide. The cathode 1 is arranged in the emission area, and the slow wave structure and the coaxial inner conductor 7 are all arranged in the beam wave interaction area of ​​the anode, and the coaxial inner conductor 7 in the beam wave interaction area acts as The beam conversion efficiency is increased, ...

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Abstract

The invention discloses a repetition-frequency low-magnetic-field axial C-waveband high-power microwave device. The device comprises an anode, a cathode, a guiding magnetic field generator, slow wave structures and a coaxial internal conductor, the anode is internally provided with an emission area and a beam wave interaction area, the cathode is arranged in the emission area, the slow wave structures and the coaxial internal conductor are arranged in the beam wave interaction area of the anode, the cathode is coaxial with the coaxial internal conductor, the slow wave structures are fixed to the inner side of the anode and arranged in the periphery of the coaxial internal conductor, a vacuum cavity is formed by vacuum pumping in the repetition-frequency low-magnetic-field axial C-waveband high-power microwave device, and the vacuum degree of the vacuum cavity does not exceed 10mPa. A baffle plate is arranged between the emission area and the beam wave interaction area. The baffle plate is provided with an annular inlet for guiding high-current electron beams generated by the cathode into the beam wave interaction area, and the diameter of the annular inlet is consistent with that of the cathode. The device is characterized by being capable of generating C-waveband high-power microwaves in repetition frequency and high in the beam wave conversion efficiency.

Description

technical field [0001] The invention relates to the technical field of high-power microwave devices, in particular to a high-power microwave device with a repetition frequency and low magnetic field axial C-band. Background technique [0002] High-power microwave refers to electromagnetic waves with a frequency ranging from 1 to 300 GHz and a peak power above 100 MW, and the C-band is a frequency band with a frequency from 4.0 to 8.0 GHz. With the development of pulse power technology and plasma physics, high-power microwave technology has also developed rapidly, especially in the development of high-power microwave sources has made great progress, there have been many different types of high-power microwave source. [0003] High peak power, high beam conversion efficiency and repeated frequency emission are the functions that must be realized for the practical application of current high-power microwave devices. Among the various types of existing high-power microwave dev...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J25/10
CPCH01J25/10
Inventor 张运俭孟凡宝丁恩燕陆巍
Owner INST OF APPLIED ELECTRONICS CHINA ACAD OF ENG PHYSICS
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