Heating chamber and semiconductor processing device

Abstract

The invention provides a heating chamber and a semiconductor processing device. The heating chamber comprises a sheet box, an annular heating device, and a reflector sleeve. The sheet box is used for bearing a plurality of processed workpieces at intervals in a vertical direction. The annular heating device sleeves the outer side of the sheet box and is used for heating the multiple processed workpieces simultaneously. And the reflector sleeve sleeves the outer side of the side wall of the annular heating device and annular reflection zones corresponding the processed workpieces are arranged at the inner side wall of the reflector sleeve; and the reflectivity of each annular reflection zone has an inverse correlation relationship with the temperature of the processed workpiece corresponding to the annular reflection zone, so that the heating uniformity of the multiple processed workpieces is improved. According to the invention, the heating uniformity of the multiple processed workpieces can be improved, so that uniformity of the process results is enhanced and thus the process quality and the economic benefits are increased.

Description

technical field [0001] The invention belongs to the technical field of microelectronic processing, and in particular relates to a heating chamber and semiconductor processing equipment. Background technique [0002] Physical vapor deposition (Physical Vapor Deposition, hereinafter referred to as PVD) technology is a commonly used processing technology in the field of microelectronics, for example, it is used to process copper interconnect layers in integrated circuits. The production of copper interconnection layer mainly includes the steps of degassing, pre-cleaning, Ta(N) deposition, and Cu deposition. The degassing step is to remove water vapor and other volatile impurities on the substrate and other processed workpieces. When implementing the degassing step, it is necessary to use a heating chamber to heat the processed workpiece such as the substrate to above 300°C. [0003] figure 1 Schematic diagram of an existing degassing chamber for simultaneous heating of multip...

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Problems solved by technology

[0004] Adopting the existing degassing chamber will inevitably have the following problems in practical applications: due to the workpiece being processed near the middle position (such as figure 1 The processed workpiece in 1) is subject to strong light, and the substrate located at the upper or lower position (such as figure 1 The processed workpieces 2 and 3) will be subject to relatively weak light, therefore, the temperature of the processed workpiece S near the middle position after heating is higher, and the temperature of the processed workpiece S at the upper or lower position is lower. In other words, the temperature of the processed workpieces gradually decreases from the middle position to the uppermost or lowermost position, resulting in unequal heating temperatures of multiple processed workpieces, that is to say, the heating uniformity of the degassing chamber in the axial direction is poor

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