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Method for preparing copper gallium sulfide photoelectric thin film from copper sulfate

A photoelectric thin film, copper gallium sulfide technology, applied in the direction of photovoltaic power generation, circuits, electrical components, etc., can solve the problems of high preparation cost and complicated process route, and achieve the effect of low production cost, low requirements for equipment and high production efficiency

Inactive Publication Date: 2016-10-12
SHANDONG JIANZHU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This technology allows for efficient manufacturing of highly pure materials with improved properties such as durability against environmental stress cracking (ESC) or resistance towards corrosion without requiring extreme temperatures or environments that can be expensive. It also offers an easier way to produce these thin layers at lower costs than current methods like sputter deposition due to its ability to achieve consistently strong compositions over long periods of time while maintaining their quality level during use.

Problems solved by technology

Technologies related to this patented technical problem addressed in these patents involve developing new photochemically active compounds called cuprous oxides which may replace traditional sources like selenium and zinc while reducing their negative side effects associated therewith. Current processes require expensive raw materials and complex equipment making them challenged from commercial standpoint due to costs and difficulties in obtaining desired orientations during manufacturing.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] a. Cleaning of the glass substrate: the glass substrate is cleaned as described above, and the size of the substrate is 20mm×20mm.

[0027] b. 1.66 parts of Cu 2 SO 4 ·5H 2 O, 1.71 parts Ga(NO 3 ) 3 ·xH 2 O and 1.0 CH 3 CSNH 2 Put into 13.3 parts of deionized water and mix evenly, and use ultrasonic vibration for more than 30 minutes to make the substances in the solution evenly mix.

[0028]c. Drop the above solution onto the glass substrate placed on the homogenizer, start the homogenizer, make the homogenizer rotate at 300 rpm for 5 seconds, and rotate at 2150 rpm for 15 seconds, so that the dripped solution is coated After uniformity, after the substrate is dried, the above-mentioned solution is repeatedly dripped and spin-coated, and then dried again. This is repeated 3 to 5 times, and a precursor thin film sample with a certain thickness is obtained on the glass substrate.

[0029] d. Put the precursor thin film sample obtained by the above process into a ...

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PUM

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Abstract

The invention provides a method for preparing a copper gallium sulfide photoelectric thin film from copper sulfate, and belongs to the technical field of preparation of photoelectric thin films for solar cells. The copper gallium sulfide photoelectric thin film is obtained through the following steps of: firstly, cleaning a glass substrate and then putting Cu2SO4.5H2O, Ga(NO3)3.xH2O and CH3CSNH2 into a solvent for mixing evenly; obtaining a precursor thin film on a glass sheet through a spin-coating method, drying the precursor thin film and putting the precursor thin film into a closed container with hydrazine hydrate; preventing a precursor thin film sample from being in contact with the hydrazine hydrate and arranging the closed container with the sample into an oven for heating and heat preservation treatment; and finally taking out the sample to soak for 24 hours and then drying the sample to obtain the copper gallium sulfide photoelectric thin film. A high-temperature and high-vacuum condition is not needed; the method is low in demands on instruments and equipment, low in production cost, high in production efficiency and easy to operate; the obtained copper gallium sulfide photoelectric thin film has relatively good continuity and uniformity; the main phase is a CuGaS2 phase; by the novel technology, the component and the structure of a target product are easy to control; and a low-cost production method capable of achieving industrialization is provided for preparation of the high-performance copper gallium sulfide photoelectric thin film.

Description

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Claims

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Application Information

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Owner SHANDONG JIANZHU UNIV
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