Graphene/carbon nanotube film Schottky junction photodetector and preparation method thereof
A carbon nanotube film and photodetector technology, which is applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of low responsivity of graphene detectors, difficult collection of photogenerated carriers, and short lifetime of photogenerated carriers. , to achieve the effect of both practicability, enhanced optoelectronic properties, and fast response speed
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[0033] see figure 1 , the graphene / carbon nanotube film Schottky junction photodetector of the present embodiment has the following structure:
[0034] The upper surface of the insulating substrate 1 is covered with a carbon nanotube film 2, one end of the upper surface of the carbon nanotube film 2 is provided with a first silver electrode 3 that is in ohmic contact with the carbon nanotube film 2, and the other end is provided with a silver electrode 3 connected to the carbon nanotube film 2. The film 2 is a graphene film 4 in Schottky contact, and a second silver electrode 5 in ohmic contact with the graphene film is arranged on the graphene film 4 .
[0035] The graphene / carbon nanotube film Schottky junction photodetector of the present embodiment is prepared according to the following steps:
[0036] (1) Sonicate the silicon dioxide wafer with acetone, alcohol, and deionized water for 10 minutes in sequence, and then dry it with a nitrogen gun to obtain an insulating su...
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