Memory element and manufacturing method thereof
A memory element and manufacturing method technology, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problems affecting the storage capacity and process yield of vertical-channel three-dimensional NAND flash memory components, memory cell defects, affecting components storage capacity, etc.
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[0047] The invention provides a memory element and its manufacturing method, which can reduce the overall resistivity of the memory element to reduce the signal transmission delay phenomenon caused by resistance and capacitance. In order to make the above-mentioned embodiment and other objects, features and advantages of the present invention more comprehensible, the vertical channel type three-dimensional NAND flash memory device 100 is specifically taken as a preferred embodiment below, and is described in detail with the accompanying drawings.
[0048]However, it must be noted that these specific implementation cases and methods are not intended to limit the present invention. The invention can still be implemented with other features, elements, methods and parameters. The proposal of the preferred embodiment is only used to illustrate the technical features of the present invention, and is not used to limit the scope of the claims of the present invention. Those with ordi...
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