A light-emitting diode epitaxial growth method with adjustable warpage during growth

Abstract

The invention discloses an epitaxial growth method for a light-emitting diode capable of adjusting wrapping in the growth process. The epitaxial growth method comprises the following steps of enabling a buffer layer to be grown on the upper surface of the substrate; enabling an unintentional doping layer to be grown on the buffer layer; enabling each layer structure of a composite adjusting layer to be grown on the unintentional doping layer; enabling a first type conductive layer to be grown on the composite adjusting layer; enabling an active layer to be grown on the first type conductive layer; and enabling an electron barrier layer, a second type conductive layer and an ohmic contact layer to be grown on the active layer in sequence. By adoption of the epitaxial growth method, the problem of epitaxial wafer bending caused by temperature changes and internal stresses when the epitaxial layers of different functions are grown on the substrate in the epitaxial growth process can be solved; and meanwhile, the problems of abnormal epitaxial surface and abnormal electrical property caused by enlarged bending of the epitaxial wafer are solved as well.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to an epitaxial growth method of light-emitting diodes with adjustable warpage in the growth process. Background technique [0002] Such as figure 1 As shown, in the conventional light-emitting diode epitaxial structure disclosed in the prior art, a buffer layer 20 is vapor-deposited on the substrate 10 by PVD, and the buffer layer 20 is an AlN buffer layer, or a GaN buffer layer, or an AlGaN buffer layer; growing an unintentionally doped layer (uGaN) 30 on the buffer layer 20; growing a first-type conductive layer (nGaN) 40 on the unintentionally doped layer 30; growing an active layer ( MQW) 50 ; a second-type conductive layer (pGaN) 60 is grown on the active layer (MQW) 50 ; an ohmic contact layer (ITO) 70 is grown on the second-type conductive layer (pGaN) 60 . [0003] Such as Figure 2a As shown, when growing the unintentionally doped layer (uGaN) on the buffe...

AI Technical Summary

Problems solved by technology

[0006] The object of the present invention is to provide a light-emitting diode epitaxial growth method with adjustable warpage during the growth process, so as to solve the problem of epitaxial wafer bending caused by temperature changes and internal stress problems when growing epitaxial layers with different functions during the epitaxial growth process of the substrate, And the epitaxial surface abnormality and electrical performance abnormality caused by the increased bending of the epitaxial wafer

Images