Method for adjusting warping degree of wafer, and semiconductor device

A warpage and wafer technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as reducing the performance and yield of semiconductor devices, the impact of back-end processes, and wafer warpage deformation.

Pending Publication Date: 2022-01-11
YANGTZE MEMORY TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the existence of stress, the wafer will be warped and deformed, which will affect the back-end process and reduce the performance and yield of semiconductor devices

Method used

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  • Method for adjusting warping degree of wafer, and semiconductor device
  • Method for adjusting warping degree of wafer, and semiconductor device
  • Method for adjusting warping degree of wafer, and semiconductor device

Examples

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Embodiment approach

[0068] In one embodiment, according to the warpage of the wafer in different directions, high-energy beam heat treatment is performed on each region in the adjustment layer, wherein at least some regions adopt different heat treatment parameters than other regions except this part of the region. The heat treatment parameters of the wafer can be used to make this part of the region and other regions generate different stresses, thereby selectively reducing the warpage of different regions of the wafer. The heat treatment parameters include heat treatment temperature and heat treatment time. Therefore, it may be that the heat treatment time adopted by at least a part of the region is different from the heat treatment time of other regions except this part of the region; or, the heat treatment temperature adopted by at least a part of the region is different from the heat treatment temperature of other regions except this part of the region; or , the temperature and time of heat ...

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Abstract

The embodiment of the invention discloses a method for adjusting the warping degree of a wafer, and a semiconductor device. The method comprises the following steps: providing a wafer with warping, wherein the wafer comprises a front surface which forms a functional structure, and a back surface which is opposite to the front surface; forming an adjusting layer on the back surface of the wafer; and performing high-energy beam heat treatment on different areas of the adjusting layer by adopting different heat treatment parameters according to the warping degrees of the wafer in different directions so as to adjust the stress distribution of the adjusting layer in different areas.

Description

technical field [0001] The present application relates to the technical field of semiconductors, in particular, to a method for adjusting wafer warpage and a semiconductor device. Background technique [0002] At present, when manufacturing semiconductor devices such as three-dimensional memories, they are usually manufactured on wafers. As the internal structure of semiconductor devices becomes more and more complex, more and more film layers and processes are required to manufacture semiconductor devices. Correspondingly, stress has become an unavoidable problem in the process of manufacturing semiconductor devices. Due to the existence of stress, the wafer will be warped and deformed, which will affect the back-end process and reduce the performance and yield of semiconductor devices. Contents of the invention [0003] In view of this, the embodiments of the present application propose a method for adjusting wafer warpage and a semiconductor device. [0004] In a firs...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/3105H01L21/324
CPCH01L21/02123H01L21/02178H01L21/3105H01L21/324
Inventor 颜元张豪艾义明朱文琪吴亮
Owner YANGTZE MEMORY TECH CO LTD
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