A light-emitting diode epitaxial structure with adjustable warpage during growth

Abstract

The invention discloses a light-emitting diode epitaxial structure with an adjustable warping growth process. A buffer layer, an unintentionally doped layer, a composite adjustment layer, a first type conductive layer, an active layer, an electron blocking layer, a second type conductive layer and an ohmic contact layer sequentially grow on a substrate from bottom to top; and the composite adjustment layer is one of GaInN / GaN / AlGaN and AlGaN / GaN / GaInN. By the light-emitting diode epitaxial structure, the problems of epitaxial wafer bending caused by a temperature change or an internal stress problem when epitaxial layers with different functions grow in the epitaxial growth process, and an abnormal epitaxial surface and the abnormal electrical property caused by an epitaxial wafer bending increase are solved.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to an epitaxial structure of light-emitting diodes with adjustable warpage during growth. Background technique [0002] like figure 1 As shown, in the conventional light-emitting diode epitaxial structure disclosed in the prior art, a buffer layer 20 is vapor-deposited on the substrate 10 by PVD, and the buffer layer 20 is an AlN buffer layer, or a GaN buffer layer, or an AlGaN buffer layer; growing an unintentionally doped layer (uGaN) 30 on the buffer layer 20; growing a first-type conductive layer (nGaN) 40 on the unintentionally doped layer 30; growing an active layer ( MQW) 50 ; a second-type conductive layer (pGaN) 60 is grown on the active layer (MQW) 50 ; an ohmic contact layer (ITO) 70 is grown on the second-type conductive layer (pGaN) 60 . [0003] like Figure 2a As shown, when growing the unintentionally doped layer (uGaN) on the buffer layer, if the wa...

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Problems solved by technology

[0006] The purpose of the present invention is to provide a light-emitting diode epitaxial structure with adjustable warpage during the growth process, so as to solve the problem of epitaxial wafer bending caused by temperature changes and internal stress problems when growing epitaxial layers with different functions during the epitaxial growth process of the substrate, and Epitaxial surface abnormalities and electrical performance abnormalities caused by increased bending of epitaxial wafers

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