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Method for deriving physical properties based on electrical characteristics of terahertz Schottky diode

A technology of Schottky diodes and physical characteristics, which is applied in the field of terahertz devices, can solve problems such as limiting the application of diodes and not providing physical parameters, and achieves the effect of convenient use

Inactive Publication Date: 2016-09-28
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

There are many kinds of commercial diodes on the market, but many manufacturers do not provide relevant physical parameters, but only provide their electrical parameters, which greatly limits the application of diodes

Method used

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  • Method for deriving physical properties based on electrical characteristics of terahertz Schottky diode
  • Method for deriving physical properties based on electrical characteristics of terahertz Schottky diode
  • Method for deriving physical properties based on electrical characteristics of terahertz Schottky diode

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Embodiment Construction

[0028] In order to make the objectives, technical solutions and advantages of the present invention more clear, the present invention will be further described in detail below in conjunction with the attached formulas, tables, drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0029] The invention is a simple and fast method that can deduce the physical properties of the Schottky diode from the electrical properties. Generally speaking, the electrical characteristic parameters provided by the manufacturer have the reverse breakdown voltage V br , zero-bias junction capacitance C j0 and series resistor R s . The physical characteristic parameters we care about are generally: the doping concentration N of the epitaxial layer d , thickness t epi and the anode area A a . Because these three parameters are required when establishing a three-dimens...

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Abstract

The invention discloses a method for deriving physical properties based on electrical characteristics of a terahertz Schottky diode. The method includes the following steps: calculating the doped concentration and thickness of an epitaxial layer through parameters such as reverse breakdown voltage that are provided by a factory, acquiring the anode area of a Schottky junction, further establishing the 3D full wave electromagnetic simulation model of a diode in accordance with the external dimension of the Schottky junction so as to fully consider the influence imposed by parasitic effects. The method provides great help for establishing a Schottky barrier diode model, has a certain versatility, and can be popularized to semiconductors of other forms.

Description

technical field [0001] The invention belongs to the technical field of terahertz devices, and in particular relates to a derivation method, which can deduce the physical parameters of Schottky diodes according to the electrical parameters. Background technique [0002] The general frequency of terahertz wave covers 0.1THz-10THz. It is the only spectrum resource that has not been fully developed and utilized in electromagnetic waves. Its long and short wave bands overlap with microwave and millimeter waves and infrared rays respectively. Communication, precision guidance, object imaging, environmental monitoring and medical diagnosis and other fields have broad application prospects. Mastering the cutting-edge technology of terahertz is of great significance to my country's national defense construction and civilian undertakings. Terahertz mixer, as the core device of the terahertz transceiver front-end, is widely used in almost all terahertz application systems such as tera...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
CPCG01R31/2601
Inventor 张勇任田昊徐锐敏延波赵伟赵孟娟
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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