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Preparation method for conductive thin film

A conductive film and film layer technology, which is applied in the manufacture of cables/conductors, conductive layers on insulating carriers, circuits, etc., can solve the problems of inability to meet performance requirements, unreasonable recycling, and low indium resources, and achieve good economic benefits. and social benefits, low production costs, clean and pollution-free surfaces

Inactive Publication Date: 2016-09-21
CHENGDU TIAN HANG ZHI HONG IP MANAGEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are also some disadvantages in the use of indium tin oxide conductive films, including: (1) Indium resources are scarce, resulting in continuous price increases, making ITO an increasingly expensive material, such as spraying, pulsed laser deposition, electroplating, etc.
Moreover, indium oxide has certain toxicity, and unreasonable recycling can easily cause environmental pollution
(2) The brittle nature of ITO makes it unable to meet the performance requirements of some new applications (such as bendable flexible displays, touch screens, organic solar cells), and is not suitable for the production of next-generation flexible electronic devices

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] The preparation method of the conductive film includes the following steps:

[0022] A. Deposited nickel layer

[0023] Deposit 2 nickel atom-thick nickel film layers on a clean, dry glass substrate;

[0024] B. Depositing graphene layers

[0025] The graphene film layer is deposited by the CVD method, and the thickness of the graphene film layer is 50 μm; in the deposition process of the CVD method, the carbon source is methane and the gas is H 2 Mixed gas with He;

[0026] C. Cleaning and drying

[0027] The semi-finished product obtained in step B is subjected to cooling treatment, and after the temperature drops to room temperature, the graphene film layer is cleaned to remove the surface nickel film layer, and then dried.

Embodiment 2

[0029] The preparation method of the conductive film includes the following steps:

[0030] A. Deposited nickel layer

[0031] Deposit 2 nickel atom-thick nickel film layers on a clean, dry glass substrate;

[0032] B. Depositing graphene layers

[0033] The graphene film layer is deposited by the CVD method, and the thickness of the graphene film layer is 100 μm; during the deposition process of the CVD method, the carbon source is methane and the gas is H 2 Mixed gas with He;

[0034] C. Cleaning and drying

[0035] The semi-finished product obtained in step B is subjected to cooling treatment, and after the temperature drops to room temperature, the graphene film layer is cleaned to remove the surface nickel film layer, and then dried.

[0036] In step A of this embodiment, the method for depositing the nickel layer is magnetron sputtering, and the background vacuum is 5×10 -5 Pa, sputtering pressure 3 Pa, substrate temperature 30°C.

Embodiment 3

[0038] The preparation method of the conductive film includes the following steps:

[0039] A. Deposited nickel layer

[0040] Deposit 2 nickel atom-thick nickel film layers on a clean, dry glass substrate;

[0041] B. Depositing graphene layers

[0042] The graphene film layer is deposited by the CVD method, and the thickness of the graphene film layer is 60 μm; during the deposition process of the CVD method, the carbon source is methane and the gas is H 2 Mixed gas with He;

[0043] C. Cleaning and drying

[0044] The semi-finished product obtained in step B is subjected to cooling treatment, and after the temperature drops to room temperature, the graphene film layer is cleaned to remove the surface nickel film layer, and then dried.

[0045] In step A of this embodiment, the method for depositing the nickel layer is magnetron sputtering, and the background vacuum is 1×10 -4 Pa, sputtering pressure 5 Pa, substrate temperature 70°C.

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Abstract

The invention discloses a preparation method of a conductive film and belongs to the technical field of conductive film production. The method includes the following steps A. Depositing a nickel layer: depositing a nickel film layer with a thickness of 2 nickel atoms on the glass substrate; B. Depositing graphene layer: using CVD method to deposit graphene film layer, the thickness of the graphene film layer is 50-100 μm; during the deposition process of the CVD method, the carbon source is methane, and the gas is H 2 Mixed gas with He; C. Cleaning and drying: cool down the semi-finished product obtained in step B, and after the temperature drops to room temperature, clean the graphene film layer, remove the nickel film layer on the surface, and then dry it. Compared with the prior art, the invention has the advantages of low production cost, simple preparation method and high efficiency.

Description

Technical field [0001] The invention relates to a method for preparing a conductive film, and belongs to the technical field of conductive film production. Background technique [0002] With the development of science and technology, society has more and more demands for new materials. Materials are the material basis for the progress of human civilization and the development of science and technology, and the renewal of materials has brought about tremendous changes in people's lives. At present, the booming new transparent and conductive thin film materials have been widely used in the fields of liquid crystal displays, touch screens, smart windows, solar cells, microelectronics, information sensors and even military industry, and are penetrating into other fields of science and technology. Because thin film technology is closely related to a variety of technologies, scientists in various fields are interested in thin film preparation and performance. [0003] Conductive film i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B13/00H01B5/14C01B31/04
CPCH01B13/00H01B5/14
Inventor 何娟
Owner CHENGDU TIAN HANG ZHI HONG IP MANAGEMENT CO LTD
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