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Preparation method of infrared electrothermal film

An electric heating film and infrared technology, applied in the direction of electric heating devices, ohmic resistance heating, electrical components, etc., can solve the problems of large attenuation, unstable power, small working temperature range, etc., and achieve small radiation heat loss and heat transfer thermal resistance Small, the effect of improving the utilization rate

Inactive Publication Date: 2016-07-27
SUZHOU SICHUANGYUANBO ELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the end of the 1980s, a number of patents and components related to electrothermal film technology have appeared one after another in China. However, due to the imperfect formula and unscientific manufacturing process, there are unstable power and large attenuation (more than 30%). Problems such as small working temperature range (within 240°C)

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Take by weighing the graphene powder of 6 weight parts, the far-infrared emission agent of 0.5 weight part, the binding diluent of 3 weight parts, at first the graphene powder is mixed with the far-infrared emission agent and stirred evenly, then add the binding diluent and mix Finally, a slurry is formed; the bonding diluent is a high temperature resistant phenolic resin, and the particle size of the graphene powder is 30-60nm.

[0022] The slurry is evenly coated on the surface of the substrate to form a film, and the first electrothermal film is formed after drying or drying, wherein the thickness of the first electrothermal film is controlled at 5 μm.

[0023] SnCl 4 .5H 2 O, ethanol, HF, H 3 PO 4 Mix and stir with deionized water according to the mass ratio of 50:12:4:5:25 to obtain a stirred mixed liquid, wherein the stirring time is 3 hours.

[0024] The stirred mixture was refluxed for 1 h in a reflux tube at 70°C.

[0025] The refluxed mixed solution was a...

Embodiment 2

[0028] Take by weighing the graphene powder of 7 weight parts, the far-infrared emission agent of 2 weight parts, the binding diluent of 5 weight parts, at first the graphene powder is mixed with the far-infrared emission agent and stirred evenly, then add the binding diluent and mix Finally, a slurry is formed; the bonding diluent is a high temperature resistant phenolic resin, and the particle size of the graphene powder is 30-60nm.

[0029] The slurry is uniformly coated on the surface of the substrate to form a film, and the first electrothermal film is formed after drying or drying, wherein the thickness of the first electrothermal film is controlled at 15 μm.

[0030] SnCl 4 .5H 2 O, ethanol, HF, H 3 PO 4 Mix and stir with deionized water according to the mass ratio of 65:20:6:8:35 to obtain a stirred mixed liquid, wherein the stirring time is 5 hours.

[0031] The stirred mixture was refluxed in the reflux tube at 90°C for h.

[0032] The refluxed mixed solution wa...

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Abstract

The invention discloses a preparation method of an infrared electrothermal film. The infrared electrothermal film comprises a substrate, a first electrothermal film and a second electrothermal film. The infrared electrothermal film prepared according to the method is combined with the advantages of a graphene heating film and a semiconductor heating film, a graphene far infrared heating part can be simulated by tiny current, energy is saved by 60% compared with a traditional heating mode, and the utilization ratio of electric energy is improved; the semiconductor heating film employing the above material and proportion is small in heat conduction resistance, and heat can be rapidly transferred to a heated body during energization; and moreover, the heating mode is high in heat conductivity, thus, the far infrared heating film is not high in temperature, no phenomena such as red getting and hot is generated, and the radiation heat loss is low.

Description

technical field [0001] The invention relates to the field of home appliance manufacturing, in particular to a preparation method of an infrared electric heating film. Background technique [0002] The traditional method of using resistance wire for heating has the disadvantages of small electric heating area, low electric heating efficiency, easy oxidation of resistance wire after long-term use, and short service life. Therefore, more and more electrothermal films have begun to enter people's field of vision. [0003] Semiconductor electrothermal film technology is an electric heating technology, which can be widely used in the fields of industry, agriculture, military, household appliances and other fields where the operating temperature is below 500 ° C. It can be used in various surfaces such as plates and tubes. heated form. Semiconductor electrothermal film technology, Europe, America, Japan and other countries have carried out theoretical research on it since the 194...

Claims

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Application Information

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IPC IPC(8): H05B3/12H05B3/20
CPCH05B3/12H05B3/20H05B2203/017
Inventor 刘娜
Owner SUZHOU SICHUANGYUANBO ELECTRONICS TECH CO LTD
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